ROHM Semiconductor GmbH 650V, 12A, THD, High Surge Resistance, Silicon-carbide (SiC) SBD SCS312AM

Description
Shorter recovery time, enabling high-speed switching. Suitable for PV power conditioner, PFC circuit in switching power supplies.
  • 650V, 12A, THD, High Surge Resistance, Silicon-carbide (SiC) SBD - SCS312AM - ROHM Semiconductor GmbH
    ROHM Semiconductor GmbH
Datasheet
Description
Shorter recovery time, enabling high-speed switching. Suitable for PV power conditioner, PFC circuit in switching power supplies.
Datasheet

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650V, 12A, THD, High Surge Resistance, Silicon-carbide (SiC) SBD - SCS312AM - ROHM Semiconductor GmbH
ROHM Semiconductor GmbH
Willich, Germany
650V, 12A, THD, High Surge Resistance, Silicon-carbide (SiC) SBD
SCS312AM
650V, 12A, THD, High Surge Resistance, Silicon-carbide (SiC) SBD SCS312AM
Shorter recovery time, enabling high-speed switching. Suitable for PV power conditioner, PFC circuit in switching power supplies.

Shorter recovery time, enabling high-speed switching. Suitable for PV power conditioner, PFC circuit in switching power supplies.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Schottky Diodes
Product Number SCS312AM
Product Name 650V, 12A, THD, High Surge Resistance, Silicon-carbide (SiC) SBD
Package TO-220; TO-220FM2L_SiC
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