MOSFET N-CH 60V 250MA VMT3 Product overview: RSM002N06T2L from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 250MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 250MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RSM002N06T2L can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 046394-RSM002N06T2L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: VMT3
Dimension: SOT-723
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 250mA (Ta)
Gate-Source Threshold Voltage: 2.3V @ 1mA
Max Input Capacitance: 15pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.4 Ohm @ 250mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
N-Channel 60V 250mA (Ta) 150mW (Ta) Surface Mount VMT3
N-Channel 60V 250mA (Ta) 150mW (Ta) Surface Mount VMT3
N-Channel 60V 250mA (Ta) 150mW (Ta) Surface Mount VMT3
MOSFET N-CH 60V 250MA VMT3
MOSFET, N-CH, 60V, 0.25A, VMT; Transistor Polarity:N Channel; Continuous Drain Current Id:250mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Power Dissipation RoHS Compliant: Yes
MOSFET N-CH 60V 250MA VMT3
MOSFET Trans MOSFET N-CH 60V 0.25A
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-RSM002N06T2L | 046394-RSM002N06T2L | 846-RSM002N06T2LTR-ND | RSM002N06T2L | 10AC8963 | RSM002N06T2L | RSM002N06T2L |
| Product Name | 60V 250MA MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RSM002N06T2L | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 60V, 0.25A, Vmt; Transistor Polarity Rohm | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| Transconductance | 2.50E-4 kS | ||||||
| PD | 150 milliwatts | 150 milliwatts | 150 milliwatts | ||||
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) |
