Manufacturer: Rohm Semiconductor
Win Source Part Number: 756166-RSJ650N10TL
Packaging: Reel - TR
Operating Temperature Range: 150°C (TJ)
Package: SC-83
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Family Name: RSJ650N10
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Manufacturer Homepage: www.rohm.com
Manufacturer Package: LPTS
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 260nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 10780pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 100W (Tc)
Rds On (Maximum) @ Id, Vgs: 9.1 mOhm @ 32.5A, 10V
Alternative Parts (Cross-Reference): RSJ650N10FRATL; AOB296L; SUB85N10-10;
Introduction Date: June 07, 2011
Estimated EOL Date: 2031
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
MOSFET N-CH 100V 65A LPTS Product overview: RSJ650N10TL from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 65A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 65A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RSJ650N10TL can be used for catalog matching and distributor lookup.
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| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 756166-RSJ650N10TL | 278-RSJ650N10TL | RSJ650N10TL | RSJ650N10TLDKR-ND | RSJ650N10TL | RSJ650N10TL |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RSJ650N10TL | 100V 65A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| PD | 100000 milliwatts | 100 milliwatts | 100000 milliwatts | |||
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) | |||
| Package Type | SOT3 | Tape & Reel (TR) | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | 4V, 10V | |
| Packing Method | Tape Reel; Reel - TR | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | |||
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel |