MOSFET P-CH 100V 25A LPTS
Manufacturer: Rohm Semiconductor
Win Source Part Number: 793392-RSJ250P10TL
Packaging: Reel package
Operating Temperature Range: 150°C (TJ)
Package: SC-83
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Family Name: RSJ250P10
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Manufacturer Package: LPTS
Channel Type Type: P
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 60nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds: 8000pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 50W (Tc)
Rds On (Maximum) @ Id, Vgs: 63 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): IRF9540NS; IRF9540NSPBF; IRF9540NSTRLPBF; FQB22P10TM;
Introduction Date: June 19, 2011
ECCN: EAR99
Estimated EOL Date: 2032
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs
MOSFET P-CH 100V 25A LPTS
MOSFET, P-CH, -100V, -25A, TO-263; Transistor Polarity:P Channel; Continuous Drain Current Id:-25A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power RoHS Compliant: Yes
MOSFET PWR MOSFET LOW RESIST DEVICE
| ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RSJ250P10TL | 793392-RSJ250P10TL | RSJ250P10TL | 10AC8959 | RSJ250P10TL |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RSJ250P10TL | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -100V, -25A, To-263; Transistor Polarity Rohm | MOSFET |
| Polarity | P-Channel; P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 100 volts | ||||
| IDSS | 25000 milliamps | -25000 milliamps | |||
| PD | 50000 milliwatts | 50000 milliwatts |
