ROHM Semiconductor USA, LLC TRANSISTORS - Transistors - FETs, MOSFETs - RF - RSJ10HN06TL RSJ10HN06TL

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1092791-RSJ10HN06TL
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 100W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: LPTS
Dimension: SC-83
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 100A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 202nC @ 10V
Max Input Capacitance: 11000pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.2 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance

MOSFET N-CH 60V 100A LPTS Product overview: RSJ10HN06TL from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RSJ10HN06TL can be used for catalog matching and distributor lookup.

N-Channel 60V 100A (Ta) 100W (Tc) Surface Mount LPTS