ROHM Semiconductor USA, LLC TRANSISTORS - Transistors - FETs, MOSFETs - RF - RSH110N03TB1 RSH110N03TB1

Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 1000958-RSH110N03TB1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta) Categories: Discrete Semiconductor Products Status: Not For New Designs Case / Package: 8-SOP Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 11A (Ta) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 17nC @ 5V Max Input Capacitance: 1300pF @ 10V Maximum Rds On at Id,Vgs: 10.7 mOhm @ 11A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 1000958-RSH110N03TB1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta) Categories: Discrete Semiconductor Products Status: Not For New Designs Case / Package: 8-SOP Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 11A (Ta) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 17nC @ 5V Max Input Capacitance: 1300pF @ 10V Maximum Rds On at Id,Vgs: 10.7 mOhm @ 11A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RSH110N03TB1 - 1000958-RSH110N03TB1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RSH110N03TB1
1000958-RSH110N03TB1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RSH110N03TB1 1000958-RSH110N03TB1
Manufacturer: Rohm Semiconductor Win Source Part Number: 1000958-RSH110N03TB1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta) Categories: Discrete Semiconductor Products Status: Not For New Designs Case / Package: 8-SOP Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 11A (Ta) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 17nC @ 5V Max Input Capacitance: 1300pF @ 10V Maximum Rds On at Id,Vgs: 10.7 mOhm @ 11A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1000958-RSH110N03TB1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Case / Package: 8-SOP
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 17nC @ 5V
Max Input Capacitance: 1300pF @ 10V
Maximum Rds On at Id,Vgs: 10.7 mOhm @ 11A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance

Buy Now
Single FETs, MOSFETs - RSH110N03TB1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RSH110N03TB1TR-ND
Single FETs, MOSFETs RSH110N03TB1TR-ND
N-Channel 30V 11A (Ta) 2W (Ta) Surface Mount 8-SOP

N-Channel 30V 11A (Ta) 2W (Ta) Surface Mount 8-SOP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RSH110N03TB1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
RSH110N03TB1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs RSH110N03TB1
MOSFET N-CH 30V 11A 8SOP

MOSFET N-CH 30V 11A 8SOP

Supplier's Site
Sheung Wan, Hong Kong
MOSFET Nch 30V 11A MOSFET

MOSFET Nch 30V 11A MOSFET

Buy Now
MOSFET N-CH 30V 11A SOP8 - 687-RSH110N03TB1 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 30V 11A SOP8
687-RSH110N03TB1
MOSFET N-CH 30V 11A SOP8 687-RSH110N03TB1
MOSFET N-CH 30V 11A SOP8

MOSFET N-CH 30V 11A SOP8

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1000958-RSH110N03TB1 RSH110N03TB1TR-ND RSH110N03TB1 RSH110N03TB1 687-RSH110N03TB1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - RSH110N03TB1 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET MOSFET N-CH 30V 11A SOP8
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
PD 2000 milliwatts 2000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

GaAs Fet Switches - KS201 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 4000 MHz
View Details
IGBT Modules - 2PS12017E34W32132NOSA1-ND - DigiKey
Specs
Package Type Module
View Details
3 suppliers
TRANSISTORS - Transistors (BJT) - Single - 2N5550TFR - 854974-2N5550TFR - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details