MOSFET N-CH 100V 17.5A CPT3 Product overview: RSD175N10TL from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 17.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 17.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RSD175N10TL can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 17.5A CPT3
N-Channel 100V 17.5A (Ta) 20W (Tc) Surface Mount CPT3
N-Channel 100V 17.5A (Ta) 20W (Tc) Surface Mount CPT3
N-Channel 100V 17.5A (Ta) 20W (Tc) Surface Mount CPT3
Manufacturer: Rohm Semiconductor
Win Source Part Number: 108359-RSD175N10TL
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 20W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: CPT3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 17.5A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 24nC @ 10V
Max Input Capacitance: 950pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 105 mOhm @ 8.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
MOSFET 4V Drive Nch MOSFET Drive Nch
MOSFET N-CH 100V 17.5A CPT3
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-RSD175N10TL | RSD175N10TL | RSD175N10TLDKR-ND | 108359-RSD175N10TL | RSD175N10TL | RSD175N10TL |
| Product Name | 100V 17.5A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RSD175N10TL | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| MOSFET Operating Mode | Enhancement | |||||
| Transconductance | 0.0050 kS | |||||
| PD | 20 milliwatts | 20000 milliwatts | 20000 milliwatts | |||
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) |