ROHM Semiconductor USA, LLC TRANSISTORS - Transistors - FETs, MOSFETs - RF - RSD131P10TL RSD131P10TL

Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 1092767-RSD131P10TL Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 850mW (Ta), 20W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: CPT3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 13A (Tc) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 2400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 200 mOhm @ 6.5A, 10V Alternative Parts (Cross-Reference): ZXMP10A16KTC; FQD12P10TM_F085; SFR9130TM_NL; Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 1092767-RSD131P10TL Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 850mW (Ta), 20W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: CPT3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 13A (Tc) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 2400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 200 mOhm @ 6.5A, 10V Alternative Parts (Cross-Reference): ZXMP10A16KTC; FQD12P10TM_F085; SFR9130TM_NL; Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

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Product
Description
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - RSD131P10TL - 1092767-RSD131P10TL - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RSD131P10TL
1092767-RSD131P10TL
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RSD131P10TL 1092767-RSD131P10TL
Manufacturer: Rohm Semiconductor Win Source Part Number: 1092767-RSD131P10TL Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 850mW (Ta), 20W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: CPT3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 13A (Tc) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 2400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 200 mOhm @ 6.5A, 10V Alternative Parts (Cross-Reference): ZXMP10A16KTC; FQD12P10TM_F085; SFR9130TM_NL; Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Sufficient

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1092767-RSD131P10TL
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: CPT3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 13A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 2400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 200 mOhm @ 6.5A, 10V
Alternative Parts (Cross-Reference): ZXMP10A16KTC; FQD12P10TM_F085; SFR9130TM_NL;
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET Trans MOSFET P-CH 100V 13A

MOSFET Trans MOSFET P-CH 100V 13A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RSD131P10TL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
RSD131P10TL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs RSD131P10TL
MOSFET P-CH 100V 13A CPT3

MOSFET P-CH 100V 13A CPT3

Supplier's Site

Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1092767-RSD131P10TL RSD131P10TL RSD131P10TL
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - RSD131P10TL MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel
V(BR)DSS 100 volts
PD 850 to 20000 milliwatts
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