ROHM Semiconductor USA, LLC TRANSISTORS - Transistors - FETs, MOSFETs - RF - RSD080N06TL RSD080N06TL

Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 1092765-RSD080N06TL Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 15W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: CPT3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 8A (Ta) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 9.4nC @ 10V Max Input Capacitance: 380pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 80 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 1092765-RSD080N06TL Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 15W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: CPT3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 8A (Ta) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 9.4nC @ 10V Max Input Capacitance: 380pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 80 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RSD080N06TL - 1092765-RSD080N06TL - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RSD080N06TL
1092765-RSD080N06TL
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RSD080N06TL 1092765-RSD080N06TL
Manufacturer: Rohm Semiconductor Win Source Part Number: 1092765-RSD080N06TL Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 15W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: CPT3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 8A (Ta) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 9.4nC @ 10V Max Input Capacitance: 380pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 80 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1092765-RSD080N06TL
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 15W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: CPT3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 8A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 9.4nC @ 10V
Max Input Capacitance: 380pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 80 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
60V 8A MOSFET Transistor
278-RSD080N06TL
60V 8A MOSFET Transistor 278-RSD080N06TL
MOSFET N-CH 60V 8A CPT3 Product overview: RSD080N06TL from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RSD080N06TL can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 8A CPT3 Product overview: RSD080N06TL from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RSD080N06TL can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - RSD080N06TL-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RSD080N06TL-ND
Single FETs, MOSFETs RSD080N06TL-ND
N-Channel 60V 8A (Ta) 15W (Tc) Surface Mount CPT3

N-Channel 60V 8A (Ta) 15W (Tc) Surface Mount CPT3

Buy Now Datasheet
Mosfet, N-Ch, 60V, 8A, To-252; Transistor Polarity Rohm - 10AC8945 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 8A, To-252; Transistor Polarity Rohm
10AC8945
Mosfet, N-Ch, 60V, 8A, To-252; Transistor Polarity Rohm 10AC8945
MOSFET, N-CH, 60V, 8A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.057ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 60V, 8A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.057ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET RECOMMENDED ALT 755-RD3L080SNTL1

MOSFET RECOMMENDED ALT 755-RD3L080SNTL1

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RSD080N06TL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
RSD080N06TL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs RSD080N06TL
MOSFET N-CH 60V 8A CPT3

MOSFET N-CH 60V 8A CPT3

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1092765-RSD080N06TL 278-RSD080N06TL RSD080N06TL-ND 10AC8945 RSD080N06TL RSD080N06TL
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - RSD080N06TL 60V 8A MOSFET Transistor Single FETs, MOSFETs Mosfet, N-Ch, 60V, 8A, To-252; Transistor Polarity Rohm MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 60 volts
PD 15000 milliwatts 15 milliwatts
TJ 150 C (302 F) 150 C (302 F)
Package Type SOT3; TO-252 (DPAK); CPT3 Tape & Reel (TR) TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-3 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
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