ROHM Semiconductor GmbH Trench MOS Structure, 100V, 2A, PMDE, Highly Efficient SBD RBLQ2VWM10

Description
The RBLQ2VWM10 is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.
Datasheet
Description
The RBLQ2VWM10 is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.
Datasheet

Suppliers

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Trench MOS Structure, 100V, 2A, PMDE, Highly Efficient SBD - RBLQ2VWM10 - ROHM Semiconductor GmbH
Willich, Germany
Trench MOS Structure, 100V, 2A, PMDE, Highly Efficient SBD
RBLQ2VWM10
Trench MOS Structure, 100V, 2A, PMDE, Highly Efficient SBD RBLQ2VWM10
The RBLQ2VWM10 is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.

The RBLQ2VWM10 is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Diodes
Product Number RBLQ2VWM10
Product Name Trench MOS Structure, 100V, 2A, PMDE, Highly Efficient SBD
RoHS Compliant RoHS
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