The RBLQ2MM10 is a Schottky Barrier Diode featuring a Trench MOS structure, designed for applications requiring high efficiency and reliability. It has a maximum repetitive peak reverse voltage of 100V and can handle an average rectified forward current of 2A, with a peak forward surge current rating of 30A. The diode exhibits low forward voltage drop, with typical values of 0.77V at 2A and 25¬?C, and low reverse leakage current, ensuring stable performance even at elevated temperatures. It is packaged in a SOD-123FL format, with 3000 pieces per reel, making it suitable for automated assembly processes. This diode is ideal for use in switching power supplies, freewheel diodes, and reverse polarity protection applications.
The RBLQ2MM10 is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Diodes |
| Product Number | RBLQ2MM10 |
| Product Name | Trench MOS Structure, 100V, 2A, SOD-123FL, Highly Efficient SBD |
| RoHS Compliant | RoHS |
