ROHM Semiconductor GmbH Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive RBLQ20BM10FH

Description
The RBLQ20BM10FH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.
Datasheet
Description
The RBLQ20BM10FH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.
Datasheet

Suppliers

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Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive - RBLQ20BM10FH - ROHM Semiconductor GmbH
Willich, Germany
Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive
RBLQ20BM10FH
Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive RBLQ20BM10FH
The RBLQ20BM10FH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.

The RBLQ20BM10FH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.

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Technical Specifications

  ROHM Semiconductor GmbH
Product Category Diodes
Product Number RBLQ20BM10FH
Product Name Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive
RoHS Compliant RoHS
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