ROHM Semiconductor GmbH 40V, 30mA, SOT-416FL, Schottky Barrier Diode RB715WM

RB715WM is a Schottky Barrier Diode designed for high-speed switching applications. It features an ultra-small mold type (EMD3F) and is constructed using silicon epitaxial planar technology, ensuring high reliability. The diode has a maximum repetitive peak reverse voltage of 40V and a low forward voltage drop of 0.37V at a junction temperature of 25¬8C. It supports an average forward rectified current of 30mA and can handle a non-repetitive forward current surge peak of 0.2A. The device operates within a temperature range of -55¬8C to +125¬8C, making it suitable for various environmental conditions. With a low reverse current of 1.0mA and a capacitance of 2pF between terminals, the RB715WM is well-suited for applications requiring efficient switching performance.