ROHM Semiconductor USA, LLC Zener Diode PTZ33B

The PTZ33B is a Zener diode from ROHM Semiconductor USA, LLC, designed for voltage regulation applications. It features a power dissipation rating of 1000 mW and operates within a junction temperature range of -55¬8C to 150¬8C. The diode is constructed using silicon epitaxial planar technology, ensuring high reliability in various electronic circuits. The electrical characteristics include a Zener voltage of 33V, with a dynamic impedance of 18Oc and a maximum reverse current of 10OºA at a test current of 10mA. The device is packaged in a small power mold type, suitable for surface mount applications, and is supplied in embossed tape with a quantity of 1500 pieces per reel. Engineers considering the PTZ33B for their projects should note its specifications for effective integration into voltage regulation circuits, particularly where space and reliability are critical.