IC DRAM 16MBIT PARALLEL 26TSOP Product overview: MSM51V17400F-60TDKX from ROHM Semiconductor is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MSM51V17400F-60T
Manufacturer: Rohm Semiconductor
Win Source Part Number: 785067-MSM51V17400F-
Packaging: Tray
Operating Temperature Range: 0°C ~ 70°C (TA)
Mounting: SMD
Technology: DRAM
Operating Supply Voltage: 3 V ~ 3.6 V
Memory Type: Volatile
Memory Size: 16Mb (4M x 4)
Access Time: 30ns
Categories: Integrated Circuits (ICs)
Memory Format: DRAM
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Manufacturer Package: 26-TSOP
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
IC DRAM 16MBIT PARALLEL 26TSOP
IC DRAM 16MBIT PARALLEL 26TSOP
DRAM Memory IC 16Mbit Parallel 30 ns 26-TSOP
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MSM51V17400F-60TDKX | 785067-MSM51V17400F-60TDKX | MSM51V17400F-60TDKX | MSM51V17400F-60TDKX | MSM51V17400F-60TDKX |
| Product Name | Memory IC and Storage Component | Memory - SDRAM - MSM51V17400F-60TDKX | Integrated Circuits (ICs) - Memory | Memory | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 30 ns | 30 ns | 30 ns | 30 ns | 30 ns |
| Cycle Time | 110 ns | 110 ns | |||
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) |
