ROHM Semiconductor USA, LLC TRANSISTORS - Transistors (BJT) - Arrays - EMZ8T2R EMZ8T2R

Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 1036361-EMZ8T2R Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 180MHz, 260MHz Transistor Polarity: NPN, PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: EMT6 Maximum Current Collector: 150mA, 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V, 12V Max Vce (sat): 400mV @ 5mA, 50mA / 250mV @ 10mA, 200mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 120 @ 1mA, 6V / 270 @ 10mA, 2V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 1036361-EMZ8T2R Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 180MHz, 260MHz Transistor Polarity: NPN, PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: EMT6 Maximum Current Collector: 150mA, 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V, 12V Max Vce (sat): 400mV @ 5mA, 50mA / 250mV @ 10mA, 200mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 120 @ 1mA, 6V / 270 @ 10mA, 2V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors (BJT) - Arrays - EMZ8T2R - 1036361-EMZ8T2R - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - EMZ8T2R
1036361-EMZ8T2R
TRANSISTORS - Transistors (BJT) - Arrays - EMZ8T2R 1036361-EMZ8T2R
Manufacturer: Rohm Semiconductor Win Source Part Number: 1036361-EMZ8T2R Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 180MHz, 260MHz Transistor Polarity: NPN, PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: EMT6 Maximum Current Collector: 150mA, 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V, 12V Max Vce (sat): 400mV @ 5mA, 50mA / 250mV @ 10mA, 200mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 120 @ 1mA, 6V / 270 @ 10mA, 2V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1036361-EMZ8T2R
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 180MHz, 260MHz
Transistor Polarity: NPN, PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: EMT6
Maximum Current Collector: 150mA, 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V, 12V
Max Vce (sat): 400mV @ 5mA, 50mA / 250mV @ 10mA, 200mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 120 @ 1mA, 6V / 270 @ 10mA, 2V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Logic Level Translators
Product Number 1036361-EMZ8T2R
Product Name TRANSISTORS - Transistors (BJT) - Arrays - EMZ8T2R
Operating Temperature 150 C (302 F)
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