ROHM Semiconductor USA, LLC TRANSISTORS - Transistors (BJT) - Arrays - EMY1 EMY1

Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 258998-EMY1 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 180MHz, 140MHz Transistor Polarity: NPN, PNP (Emitter Coupled) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: EMT5 Maximum Current Collector: 150mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 120 @ 1mA, 6V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 258998-EMY1 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 180MHz, 140MHz Transistor Polarity: NPN, PNP (Emitter Coupled) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: EMT5 Maximum Current Collector: 150mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 120 @ 1mA, 6V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Sufficient
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TRANSISTORS - Transistors (BJT) - Arrays - EMY1 - 258998-EMY1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - EMY1
258998-EMY1
TRANSISTORS - Transistors (BJT) - Arrays - EMY1 258998-EMY1
Manufacturer: Rohm Semiconductor Win Source Part Number: 258998-EMY1 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 180MHz, 140MHz Transistor Polarity: NPN, PNP (Emitter Coupled) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: EMT5 Maximum Current Collector: 150mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 120 @ 1mA, 6V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Sufficient

Manufacturer: Rohm Semiconductor
Win Source Part Number: 258998-EMY1
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 180MHz, 140MHz
Transistor Polarity: NPN, PNP (Emitter Coupled)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: EMT5
Maximum Current Collector: 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 120 @ 1mA, 6V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  Win Source Electronics
Product Category Logic Level Translators
Product Number 258998-EMY1
Product Name TRANSISTORS - Transistors (BJT) - Arrays - EMY1
Operating Temperature 150 C (302 F)
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