ROHM Semiconductor USA, LLC TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMD30T2R EMD30T2R

Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 015302-EMD30T2R Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz, 260MHz Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 10k, 1k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Not For New Designs Case / Package: EMT6 Maximum Current Collector: 100mA, 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V, 30V Max Vce (sat): 300mV @ 500μA, 10mA / 300mV @ 2.5mA, 50mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 30 @ 5mA, 5V / 140 @ 100mA, 2V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 015302-EMD30T2R Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz, 260MHz Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 10k, 1k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Not For New Designs Case / Package: EMT6 Maximum Current Collector: 100mA, 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V, 30V Max Vce (sat): 300mV @ 500μA, 10mA / 300mV @ 2.5mA, 50mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 30 @ 5mA, 5V / 140 @ 100mA, 2V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMD30T2R - 015302-EMD30T2R - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMD30T2R
015302-EMD30T2R
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMD30T2R 015302-EMD30T2R
Manufacturer: Rohm Semiconductor Win Source Part Number: 015302-EMD30T2R Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz, 260MHz Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 10k, 1k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Not For New Designs Case / Package: EMT6 Maximum Current Collector: 100mA, 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V, 30V Max Vce (sat): 300mV @ 500μA, 10mA / 300mV @ 2.5mA, 50mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 30 @ 5mA, 5V / 140 @ 100mA, 2V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 015302-EMD30T2R
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz, 260MHz
Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 10k, 1k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Case / Package: EMT6
Maximum Current Collector: 100mA, 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V, 30V
Max Vce (sat): 300mV @ 500μA, 10mA / 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 30 @ 5mA, 5V / 140 @ 100mA, 2V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Logic Level Translators
Product Number 015302-EMD30T2R
Product Name TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMD30T2R
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