ROHM Semiconductor GmbH 600V High Voltage 3 Phase Bridge Driver BS2130F-G

Description
The BS2130F is a monolithic bridge driver IC, which can drive N-channel power MOSFET and IGBT driver in 3 phase systems with bootstrap operations. The floating channel can be used to driven an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600V. The logic inputs can be used 3.3V and 5.0V. To provide a protection circuit, the device Includes an Under Voltage Lockout (UVLO) circuit and an Over Current Protection (OCP) circuit. The UVLO circuit prevents malfunction when VCC and VBS are lower than the specified threshold voltage.
Datasheet
Description
The BS2130F is a monolithic bridge driver IC, which can drive N-channel power MOSFET and IGBT driver in 3 phase systems with bootstrap operations. The floating channel can be used to driven an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600V. The logic inputs can be used 3.3V and 5.0V. To provide a protection circuit, the device Includes an Under Voltage Lockout (UVLO) circuit and an Over Current Protection (OCP) circuit. The UVLO circuit prevents malfunction when VCC and VBS are lower than the specified threshold voltage.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
600V High Voltage 3 Phase Bridge Driver - BS2130F-G - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
600V High Voltage 3 Phase Bridge Driver
BS2130F-G
600V High Voltage 3 Phase Bridge Driver BS2130F-G
The BS2130F is a monolithic bridge driver IC, which can drive N-channel power MOSFET and IGBT driver in 3 phase systems with bootstrap operations. The floating channel can be used to driven an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600V. The logic inputs can be used 3.3V and 5.0V. To provide a protection circuit, the device Includes an Under Voltage Lockout (UVLO) circuit and an Over Current Protection (OCP) circuit. The UVLO circuit prevents malfunction when VCC and VBS are lower than the specified threshold voltage.

The BS2130F is a monolithic bridge driver IC, which can drive N-channel power MOSFET and IGBT driver in 3 phase systems with bootstrap operations. The floating channel can be used to driven an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600V. The logic inputs can be used 3.3V and 5.0V. To provide a protection circuit, the device Includes an Under Voltage Lockout (UVLO) circuit and an Over Current Protection (OCP) circuit. The UVLO circuit prevents malfunction when VCC and VBS are lower than the specified threshold voltage.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor USA, LLC
Product Category Gate Drivers
Product Number BS2130F-G
Product Name 600V High Voltage 3 Phase Bridge Driver
Driver Type Dual Gate Driver
Number of Outputs 1
Supply Voltage 11.5 to 20 volts
Operating Temperature -40 to 125 C (-40 to 257 F)
Unlock Full Specs
to access all available technical data

Similar Products

 - 26LS29/BEA - Rochester Electronics
Rochester Electronics
Specs
Package Type DIP; CDIP16
Packing Method Tube; Tube; Other
View Details
LED Drivers - AAT1270IFO-T1 - Quarktwin Technology Ltd.
Skyworks Solutions, Inc.
Specs
Number of Outputs 2; 2
Output Configuration Inverting; Step-Up (Boost)
Output Current 0.5000 amps
View Details
 - 74HC240D/C4J - Rochester Electronics
Nexperia B.V.
Specs
Output Configuration Inverting
Package Type SOT163-1
Packing Method Tape Reel; Tape & Reel; Other
View Details