ROHM Semiconductor GmbH 600V High voltage High & Low-side, Gate Driver BS2103F

Description
The BS2103F is a monolithic high and low side gate drive IC, which can drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to driven an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600V. The logic inputs can be used 3.3V and 5.0V. The Under Voltage Lockout (UVLO) circuit prevents malfunction when VCC and VBS are lower than the specified threshold voltage.
Datasheet
Description
The BS2103F is a monolithic high and low side gate drive IC, which can drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to driven an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600V. The logic inputs can be used 3.3V and 5.0V. The Under Voltage Lockout (UVLO) circuit prevents malfunction when VCC and VBS are lower than the specified threshold voltage.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
600V High voltage High & Low-side, Gate Driver - BS2103F - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
600V High voltage High & Low-side, Gate Driver
BS2103F
600V High voltage High & Low-side, Gate Driver BS2103F
The BS2103F is a monolithic high and low side gate drive IC, which can drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to driven an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600V. The logic inputs can be used 3.3V and 5.0V. The Under Voltage Lockout (UVLO) circuit prevents malfunction when VCC and VBS are lower than the specified threshold voltage.

The BS2103F is a monolithic high and low side gate drive IC, which can drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to driven an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600V. The logic inputs can be used 3.3V and 5.0V. The Under Voltage Lockout (UVLO) circuit prevents malfunction when VCC and VBS are lower than the specified threshold voltage.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor USA, LLC
Product Category Gate Drivers
Product Number BS2103F
Product Name 600V High voltage High & Low-side, Gate Driver
Driver Type 600V High voltage High & Low-side, Gate Driver
Number of Outputs 1
Supply Voltage 10 to 18 volts
Operating Temperature -40 to 125 C (-40 to 257 F)
Unlock Full Specs
to access all available technical data

Similar Products

Clock Buffers, Drivers - CDCLVP2104RHDR - Quarktwin Technology Ltd.
Specs
Output Configuration Inverting
Supply Voltage 2.38 to 3.6 volts
Switching Frequency 2.00E6 kHz
View Details
Integrated Circuits (ICs) - Power Management (PMIC) - Power Distribution Switches, Load Drivers - AAT4616AIPU-1-T1 - Shenzhen Shengyu Electronics Technology Limited
Specs
Operating Temperature -40 to 85 C (-40 to 185 F)
Packing Method Tape Reel; Tape & Reel (TR),Tape & Reel (TR); Other
View Details
2 suppliers