ROHM Semiconductor USA, LLC Memory BR93L56RFVJ-WE2

Description
EEPROM Memory IC 2Kbit Microwire 2 MHz 8-TSSOP-BJ
Datasheet
Description
EEPROM Memory IC 2Kbit Microwire 2 MHz 8-TSSOP-BJ
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - BR93L56RFVJ-WE2 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 2Kbit Microwire 2 MHz 8-TSSOP-BJ

EEPROM Memory IC 2Kbit Microwire 2 MHz 8-TSSOP-BJ

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - BR93L56RFVJ-WE2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
BR93L56RFVJ-WE2
Integrated Circuits (ICs) - Memory - Memory BR93L56RFVJ-WE2
IC EEPROM 2KBIT SPI 2MHZ 8TSSOP

IC EEPROM 2KBIT SPI 2MHZ 8TSSOP

Supplier's Site
IC EEPROM 2KBIT SPI 2MHZ 8TSSOP

IC EEPROM 2KBIT SPI 2MHZ 8TSSOP

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number BR93L56RFVJ-WE2 BR93L56RFVJ-WE2 BR93L56RFVJ-WE2
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category EEPROM; EEPROM EEPROM; Non-Volatile EEPROM; EEPROM
Unlock Full Specs
to access all available technical data

Similar Products

Memory - CAT24C02YGE-T3 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 900 ns
Density 2 kbits
View Details
Memory - 2603572 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
Memory - MT42C4256 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category NVRAM; VRAM
Access Time 100 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details