ROHM Semiconductor USA, LLC Memory BR93G86FVT-3BGE2

Description
EEPROM Memory IC 16Kbit Microwire 3 MHz 8-TSSOP-B
Datasheet
Description
EEPROM Memory IC 16Kbit Microwire 3 MHz 8-TSSOP-B
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - BR93G86FVT-3BGE2 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 16Kbit Microwire 3 MHz 8-TSSOP-B

EEPROM Memory IC 16Kbit Microwire 3 MHz 8-TSSOP-B

Buy Now Datasheet
IC EEPROM 16K SPI 3MHZ 8TSSOP

IC EEPROM 16K SPI 3MHZ 8TSSOP

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - BR93G86FVT-3BGE2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
BR93G86FVT-3BGE2
Integrated Circuits (ICs) - Memory - Memory BR93G86FVT-3BGE2
IC EEPROM 16KBIT MIC WIRE 8TSSOP

IC EEPROM 16KBIT MIC WIRE 8TSSOP

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number BR93G86FVT-3BGE2 BR93G86FVT-3BGE2 BR93G86FVT-3BGE2
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category EEPROM; EEPROM EEPROM; EEPROM EEPROM; Non-Volatile
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 16 kbits 16 kbits 16 kbits
Package Type SSOP; TSSOP; 8-TSSOP (0.173\", 4.40mm Width) SSOP; TSSOP
Unlock Full Specs
to access all available technical data

Similar Products

Memory - JM38510/23103BFA - Quarktwin Technology Ltd.
View Details
2 suppliers
Memory - 16-3791-01-T - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
SDRAM - 2420777 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 0.4000 ns
Number of Words 64000 k
View Details