ROHM Semiconductor USA, LLC Memory - BR34E02FVT-WE2 BR34E02FVT-WE2

Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 1154473-BR34E02FVT-W E2 Manufacturer Homepage: www.rohm.com Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 1154473-BR34E02FVT-W E2 Manufacturer Homepage: www.rohm.com Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
Request a Quote
Datasheet
Datasheet Summary
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The BR34E02FVT-WE2 is a 256vó8 bit serial EEPROM from Lingto Electronic Limited, designed for applications requiring reliable data storage. It operates within a voltage range of 1.7V to 3.6V and features a two-wire serial interface, making it compatible with various microcontrollers. The device supports a page write function of 16 bytes and includes a write protect mode to enhance data security. With a typical write current of 0.4mA and a read current of 0.1mA at 1.7V, the EEPROM is optimized for low power consumption, with a standby current of just 0.1¬µA. It boasts a high endurance of up to 1,000,000 write/erase cycles and a data retention period of 40 years. The package options include TSSOP-B8 and VSON008X2030, with dimensions suitable for compact designs. Engineers looking for a reliable and efficient memory solution for their projects may find the BR34E02FVT-WE2 suitable due to its robust features and performance specifications.

Datasheet Summary
Powered by GS/AI

The BR34E02FVT-WE2 is a 256vó8 bit serial EEPROM from Lingto Electronic Limited, designed for applications requiring reliable data storage. It operates within a voltage range of 1.7V to 3.6V and features a two-wire serial interface, making it compatible with various microcontrollers. The device supports a page write function of 16 bytes and includes a write protect mode to enhance data security. With a typical write current of 0.4mA and a read current of 0.1mA at 1.7V, the EEPROM is optimized for low power consumption, with a standby current of just 0.1¬µA. It boasts a high endurance of up to 1,000,000 write/erase cycles and a data retention period of 40 years. The package options include TSSOP-B8 and VSON008X2030, with dimensions suitable for compact designs. Engineers looking for a reliable and efficient memory solution for their projects may find the BR34E02FVT-WE2 suitable due to its robust features and performance specifications.

Suppliers

Company
Product
Description
Supplier Links
Memory - BR34E02FVT-WE2 - 1154473-BR34E02FVT-WE2 - Win Source Electronics
Laguna Hills, CA, United States
Memory - BR34E02FVT-WE2
1154473-BR34E02FVT-WE2
Memory - BR34E02FVT-WE2 1154473-BR34E02FVT-WE2
Manufacturer: Rohm Semiconductor Win Source Part Number: 1154473-BR34E02FVT-W E2 Manufacturer Homepage: www.rohm.com Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1154473-BR34E02FVT-WE2
Manufacturer Homepage: www.rohm.com
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

Buy Now
Singapore
Memory IC and Storage Component
774-BR34E02FVT-WE2
Memory IC and Storage Component 774-BR34E02FVT-WE2
IC EEPROM 2KBIT I2C 8TSSOPB Product overview: BR34E02FVT-WE2 from ROHM Semiconductor is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BR34E02FVT-WE2 can be used for catalog matching and distributor lookup.

IC EEPROM 2KBIT I2C 8TSSOPB Product overview: BR34E02FVT-WE2 from ROHM Semiconductor is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BR34E02FVT-WE2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - BR34E02FVT-WE2 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 2Kbit I²C 400 kHz 8-TSSOP-B

EEPROM Memory IC 2Kbit I²C 400 kHz 8-TSSOP-B

Buy Now Datasheet
IC EEPROM 2KBIT I2C 8TSSOPB

IC EEPROM 2KBIT I2C 8TSSOPB

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - BR34E02FVT-WE2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
BR34E02FVT-WE2
Integrated Circuits (ICs) - Memory - Memory BR34E02FVT-WE2
IC EEPROM 2KBIT I2C 8TSSOPB

IC EEPROM 2KBIT I2C 8TSSOPB

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 1154473-BR34E02FVT-WE2 774-BR34E02FVT-WE2 BR34E02FVT-WE2 BR34E02FVT-WE2 BR34E02FVT-WE2
Product Name Memory - BR34E02FVT-WE2 Memory IC and Storage Component Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category EEPROM; Non-Volatile EEPROM; EEPROM EEPROM; EEPROM EEPROM; Non-Volatile
Access Time 3500 ns
Cycle Time 5.00E6 ns 5.00E6 ns
Data Retention 40 years
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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