ROHM Semiconductor USA, LLC IC EEPROM 64K SPI 10MHZ 8TSSOPB BR25H640FVT-2CE2

Description
IC EEPROM 64K SPI 10MHZ 8TSSOPB
Description
IC EEPROM 64K SPI 10MHZ 8TSSOPB
Datasheet
Datasheet Summary
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The BR25H640FVT-2CE2 is a serial EEPROM with a capacity of 64Kbits, utilizing an SPI bus interface. It operates within a voltage range of 2.5V to 5.5V and is suitable for automotive applications, as it is AEC-Q100 qualified. The device supports high-speed clock operation up to 10MHz and features a page write mode, allowing for efficient data writing. It has a low supply current, with typical values of 1.1mA during write operations and 1.0mA during read operations at 5V. The device also boasts a standby current of just 0.1OºA, making it ideal for battery-powered applications. Data retention is specified for over 100 years at 25¬8C, with write endurance exceeding 1 million cycles. The BR25H640FVT-2CE2 includes several write protection features to prevent accidental data modification, including a write prohibition command and a hardware write protection pin. The product is available in multiple package options, including TSSOP-B8 and SOP8, with dimensions suitable for compact designs.

Datasheet Summary
Powered by GS/AI

The BR25H640FVT-2CE2 is a serial EEPROM with a capacity of 64Kbits, utilizing an SPI bus interface. It operates within a voltage range of 2.5V to 5.5V and is suitable for automotive applications, as it is AEC-Q100 qualified. The device supports high-speed clock operation up to 10MHz and features a page write mode, allowing for efficient data writing. It has a low supply current, with typical values of 1.1mA during write operations and 1.0mA during read operations at 5V. The device also boasts a standby current of just 0.1OºA, making it ideal for battery-powered applications. Data retention is specified for over 100 years at 25¬8C, with write endurance exceeding 1 million cycles. The BR25H640FVT-2CE2 includes several write protection features to prevent accidental data modification, including a write prohibition command and a hardware write protection pin. The product is available in multiple package options, including TSSOP-B8 and SOP8, with dimensions suitable for compact designs.

Suppliers

Company
Product
Description
Supplier Links
IC EEPROM 64K SPI 10MHZ 8TSSOPB - 687-BR25H640FVT-2CE2 - Utmel Electronic Limited
Hong Kong, China
IC EEPROM 64K SPI 10MHZ 8TSSOPB
687-BR25H640FVT-2CE2
IC EEPROM 64K SPI 10MHZ 8TSSOPB 687-BR25H640FVT-2CE2
IC EEPROM 64K SPI 10MHZ 8TSSOPB

IC EEPROM 64K SPI 10MHZ 8TSSOPB

Supplier's Site
Memory - BR25H640FVT-2CE2 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 64Kbit SPI 10 MHz 8-TSSOP-B

EEPROM Memory IC 64Kbit SPI 10 MHz 8-TSSOP-B

Buy Now Datasheet
IC EEPROM 64KBIT SPI 8TSSOPB

IC EEPROM 64KBIT SPI 8TSSOPB

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - BR25H640FVT-2CE2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
BR25H640FVT-2CE2
Integrated Circuits (ICs) - Memory - Memory BR25H640FVT-2CE2
IC EEPROM 64KBIT SPI 8TSSOPB

IC EEPROM 64KBIT SPI 8TSSOPB

Supplier's Site
Eeprom, Aec-Q100, 64Kbit, -40To125Deg C Rohs Compliant Rohm - 80AH1665 - Newark, An Avnet Company
Chicago, IL, United States
Eeprom, Aec-Q100, 64Kbit, -40To125Deg C Rohs Compliant Rohm
80AH1665
Eeprom, Aec-Q100, 64Kbit, -40To125Deg C Rohs Compliant Rohm 80AH1665
EEPROM, AEC-Q100, 64KBIT, -40TO125DEG C ROHS COMPLIANT: YES

EEPROM, AEC-Q100, 64KBIT, -40TO125DEG C ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Utmel Electronic Limited Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 687-BR25H640FVT-2CE2 BR25H640FVT-2CE2 BR25H640FVT-2CE2 BR25H640FVT-2CE2 80AH1665
Product Name IC EEPROM 64K SPI 10MHZ 8TSSOPB Memory Memory Integrated Circuits (ICs) - Memory - Memory Eeprom, Aec-Q100, 64Kbit, -40To125Deg C Rohs Compliant Rohm
Memory Category EEPROM; Non-Volatile EEPROM; EEPROM EEPROM; EEPROM EEPROM; Non-Volatile EEPROM
Logic Family CMOS
Cycle Time 4.00E6 ns 4.00E6 ns
Endurance 1000000 Write/Erase Cycles
Operating Temperature -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F)
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