ROHM Semiconductor USA, LLC Memory BR25H640FVT-2CE2

Description
EEPROM Memory IC 64Kbit SPI 10 MHz 8-TSSOP-B
Description
EEPROM Memory IC 64Kbit SPI 10 MHz 8-TSSOP-B
Datasheet
Datasheet Summary
Powered by GS/AI

The BR25H640FVT-2CE2 is a serial EEPROM with a capacity of 64Kbits, utilizing an SPI bus interface. It operates within a voltage range of 2.5V to 5.5V and is suitable for automotive applications, as it is AEC-Q100 qualified. The device supports high-speed clock operation up to 10MHz and features a page write mode, allowing for efficient data writing. It has a low supply current, with typical values of 1.1mA during write operations and 1.0mA during read operations at 5V. The device also boasts a standby current of just 0.1OºA, making it ideal for battery-powered applications. Data retention is specified for over 100 years at 25¬8C, with write endurance exceeding 1 million cycles. The BR25H640FVT-2CE2 includes several write protection features to prevent accidental data modification, including a write prohibition command and a hardware write protection pin. The product is available in multiple package options, including TSSOP-B8 and SOP8, with dimensions suitable for compact designs.

Datasheet Summary
Powered by GS/AI

The BR25H640FVT-2CE2 is a serial EEPROM with a capacity of 64Kbits, utilizing an SPI bus interface. It operates within a voltage range of 2.5V to 5.5V and is suitable for automotive applications, as it is AEC-Q100 qualified. The device supports high-speed clock operation up to 10MHz and features a page write mode, allowing for efficient data writing. It has a low supply current, with typical values of 1.1mA during write operations and 1.0mA during read operations at 5V. The device also boasts a standby current of just 0.1OºA, making it ideal for battery-powered applications. Data retention is specified for over 100 years at 25¬8C, with write endurance exceeding 1 million cycles. The BR25H640FVT-2CE2 includes several write protection features to prevent accidental data modification, including a write prohibition command and a hardware write protection pin. The product is available in multiple package options, including TSSOP-B8 and SOP8, with dimensions suitable for compact designs.

Suppliers

Company
Product
Description
Supplier Links
Memory - BR25H640FVT-2CE2 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 64Kbit SPI 10 MHz 8-TSSOP-B

EEPROM Memory IC 64Kbit SPI 10 MHz 8-TSSOP-B

Buy Now Datasheet
IC EEPROM 64KBIT SPI 8TSSOPB

IC EEPROM 64KBIT SPI 8TSSOPB

Supplier's Site Datasheet
IC EEPROM 64K SPI 10MHZ 8TSSOPB - 687-BR25H640FVT-2CE2 - Utmel Electronic Limited
Hong Kong, China
IC EEPROM 64K SPI 10MHZ 8TSSOPB
687-BR25H640FVT-2CE2
IC EEPROM 64K SPI 10MHZ 8TSSOPB 687-BR25H640FVT-2CE2
IC EEPROM 64K SPI 10MHZ 8TSSOPB

IC EEPROM 64K SPI 10MHZ 8TSSOPB

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - BR25H640FVT-2CE2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
BR25H640FVT-2CE2
Integrated Circuits (ICs) - Memory - Memory BR25H640FVT-2CE2
IC EEPROM 64KBIT SPI 8TSSOPB

IC EEPROM 64KBIT SPI 8TSSOPB

Supplier's Site
Eeprom, Aec-Q100, 64Kbit, -40To125Deg C Rohs Compliant Rohm - 80AH1665 - Newark, An Avnet Company
Chicago, IL, United States
Eeprom, Aec-Q100, 64Kbit, -40To125Deg C Rohs Compliant Rohm
80AH1665
Eeprom, Aec-Q100, 64Kbit, -40To125Deg C Rohs Compliant Rohm 80AH1665
EEPROM, AEC-Q100, 64KBIT, -40TO125DEG C ROHS COMPLIANT: YES

EEPROM, AEC-Q100, 64KBIT, -40TO125DEG C ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number BR25H640FVT-2CE2 BR25H640FVT-2CE2 687-BR25H640FVT-2CE2 BR25H640FVT-2CE2 80AH1665
Product Name Memory Memory IC EEPROM 64K SPI 10MHZ 8TSSOPB Integrated Circuits (ICs) - Memory - Memory Eeprom, Aec-Q100, 64Kbit, -40To125Deg C Rohs Compliant Rohm
Memory Category EEPROM; EEPROM EEPROM; EEPROM EEPROM; Non-Volatile EEPROM; Non-Volatile EEPROM
Operating Temperature -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F)
Density 64 kbits 64 kbits 66 kbits 64 kbits
Package Type SSOP; TSSOP; 8-TSSOP (0.173\", 4.40mm Width) SSOP; 8-TSSOP (0.173, 4.40mm Width)
Supply Voltage 2.5V ~ 5.5V 5V; 5V Surface Mount
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882568 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Memory IC and Storage Component - 774-93425DMQB30 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category Volatile; SRAM Chip
Access Time 30 ns
Cycle Time 20 ns
View Details
4 suppliers
Memory - RAM - MT5C1008CW-45/883C - 1230137-MT5C1008CW-45/883C - Win Source Electronics
Specs
Memory Category SRAM Chip
Operating Temperature -55 C (-67 F)
Density 1000 kbits
View Details
2 suppliers
Memory - 8 611 200 879 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers