ROHM Semiconductor USA, LLC Memory BR25G512F-3GE2

Description
EEPROM Memory IC 512Kbit SPI 10 MHz 8-SOP
Datasheet
Description
EEPROM Memory IC 512Kbit SPI 10 MHz 8-SOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - BR25G512F-3GE2 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 512Kbit SPI 10 MHz 8-SOP

EEPROM Memory IC 512Kbit SPI 10 MHz 8-SOP

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - BR25G512F-3GE2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
BR25G512F-3GE2
Integrated Circuits (ICs) - Memory - Memory BR25G512F-3GE2
IC EEPROM 512KBIT SPI 10MHZ 8SOP

IC EEPROM 512KBIT SPI 10MHZ 8SOP

Supplier's Site
IC EEPROM 512KBIT SPI 10MHZ 8SOP

IC EEPROM 512KBIT SPI 10MHZ 8SOP

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number BR25G512F-3GE2 BR25G512F-3GE2 BR25G512F-3GE2
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category EEPROM; EEPROM EEPROM; Non-Volatile EEPROM; EEPROM
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 512 kbits 512 kbits 512 kbits
Package Type SOIC; 8-SOIC (0.173\", 4.40mm Width)
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