ROHM Semiconductor USA, LLC Memory BR25G512F-3GE2

Description
EEPROM Memory IC 512Kbit SPI 10 MHz 8-SOP
Datasheet
Description
EEPROM Memory IC 512Kbit SPI 10 MHz 8-SOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - BR25G512F-3GE2 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 512Kbit SPI 10 MHz 8-SOP

EEPROM Memory IC 512Kbit SPI 10 MHz 8-SOP

Buy Now Datasheet
IC EEPROM 512KBIT SPI 10MHZ 8SOP

IC EEPROM 512KBIT SPI 10MHZ 8SOP

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - BR25G512F-3GE2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
BR25G512F-3GE2
Integrated Circuits (ICs) - Memory - Memory BR25G512F-3GE2
IC EEPROM 512KBIT SPI 10MHZ 8SOP

IC EEPROM 512KBIT SPI 10MHZ 8SOP

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number BR25G512F-3GE2 BR25G512F-3GE2 BR25G512F-3GE2
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category EEPROM; EEPROM EEPROM; EEPROM EEPROM; Non-Volatile
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 512 kbits 512 kbits 512 kbits
Package Type SOIC; 8-SOIC (0.173\", 4.40mm Width)
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