The BR24T512FVT-3AME2 is a serial EEPROM memory device with a capacity of 512Kbits, utilizing an I¬=C bus interface. It operates within a voltage range of 1.7V to 5.5V, making it suitable for battery-powered applications. The device supports a maximum clock frequency of 1MHz and features a page write mode with a page size of 128 bytes, allowing efficient data writing. This EEPROM is designed for low power consumption, with a write current of up to 4.5mA and a read current of 2.0mA at maximum voltage. It has a write endurance of over 1 million cycles and offers data retention of more than 40 years. The device includes a write protect (WP) function to prevent accidental writes, particularly at low voltage conditions. The BR24T512FVT-3AME2 is AEC-Q100 Grade 3 qualified, indicating its reliability for automotive applications. It is available in a TSSOP-B8 package, measuring 3.00mm x 6.40mm x 1.20mm. The product also features built-in noise filtering on the SCL and SDA terminals, enhancing signal integrity.
IC EEPROM 512KBIT I2C 8TSSOPB Product overview: BR24T512FVT-3AME2 from ROHM Semiconductor is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BR24T512FVT-3AME
Win Source Part Number: 1340275-BR24T512FVT-
Category: Integrated Circuits (ICs) - Memory - Memory
Series: Automotive, AEC-Q100
Package: Tape & Reel
Standard Package: 3,000
Technology: EEPROM
Memory Type: Non-Volatile
Memory Size: 512Kbit
Voltage - Supply: 1.7V ~ 5.5V
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP-B
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: EEPROM
Clock Frequency: 1 MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
ECCN: 3A991B1B2
Fake Threat In the Open Market: 64 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0051
Mfr: Rohm Semiconductor
Base Product Number: BR24T512
Memory Organization: 64K x 8
EEPROM, AEC-Q100, 512KBIT, -40TO85DEG C ROHS COMPLIANT: YES
IC EEPROM 512KBIT I2C 8TSSOPB
EEPROM Memory IC 512Kbit I²C 1 MHz 8-TSSOP-B
IC EEPROM 512KBIT I2C 8TSSOPB
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Lingto Electronic Limited | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-BR24T512FVT-3AME2 | 1340275-BR24T512FVT-3AME2 | 80AH1647 | BR24T512FVT-3AME2 | BR24T512FVT-3AME2 | BR24T512FVT-3AME2 |
| Product Name | Memory IC and Storage Component | Integrated Circuits (ICs) - Memory - Memory | Eeprom, Aec-Q100, 512Kbit, -40To85Deg C Rohs Compliant Rohm | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | EEPROM; Non-Volatile | EEPROM; Non-Volatile | EEPROM | EEPROM; EEPROM | EEPROM; EEPROM | EEPROM; Non-Volatile |
| Cycle Time | 5.00E6 ns | 5.00E6 ns | ||||
| Data Retention | 40 years | |||||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |||
| Density | 512 kbits | 512 kbits | 512 kbits | 512 kbits |
