ROHM Semiconductor USA, LLC Integrated Circuits (ICs) - Memory - Memory BR24T512FVT-3AME2

Description
Win Source Part Number: 1340275-BR24T512FVT- 3AME2 Category: Integrated Circuits (ICs) - Memory - Memory Series: Automotive, AEC-Q100 Package: Tape & Reel Standard Package: 3,000 Technology: EEPROM Memory Type: Non-Volatile Memory Size: 512Kbit Voltage - Supply: 1.7V ~ 5.5V Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP-B Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: EEPROM Clock Frequency: 1 MHz Write Cycle Time - Word, Page: 5ms Memory Interface: I2C ECCN: 3A991B1B2 Fake Threat In the Open Market: 64 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8542.32.0051 Mfr: Rohm Semiconductor Base Product Number: BR24T512 Memory Organization: 64K x 8
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Description
Win Source Part Number: 1340275-BR24T512FVT- 3AME2 Category: Integrated Circuits (ICs) - Memory - Memory Series: Automotive, AEC-Q100 Package: Tape & Reel Standard Package: 3,000 Technology: EEPROM Memory Type: Non-Volatile Memory Size: 512Kbit Voltage - Supply: 1.7V ~ 5.5V Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP-B Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: EEPROM Clock Frequency: 1 MHz Write Cycle Time - Word, Page: 5ms Memory Interface: I2C ECCN: 3A991B1B2 Fake Threat In the Open Market: 64 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8542.32.0051 Mfr: Rohm Semiconductor Base Product Number: BR24T512 Memory Organization: 64K x 8
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Datasheet
Datasheet Summary
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The BR24T512FVT-3AME2 is a serial EEPROM memory device with a capacity of 512Kbits, utilizing an I¬=C bus interface. It operates within a voltage range of 1.7V to 5.5V, making it suitable for battery-powered applications. The device supports a maximum clock frequency of 1MHz and features a page write mode with a page size of 128 bytes, allowing efficient data writing. This EEPROM is designed for low power consumption, with a write current of up to 4.5mA and a read current of 2.0mA at maximum voltage. It has a write endurance of over 1 million cycles and offers data retention of more than 40 years. The device includes a write protect (WP) function to prevent accidental writes, particularly at low voltage conditions. The BR24T512FVT-3AME2 is AEC-Q100 Grade 3 qualified, indicating its reliability for automotive applications. It is available in a TSSOP-B8 package, measuring 3.00mm x 6.40mm x 1.20mm. The product also features built-in noise filtering on the SCL and SDA terminals, enhancing signal integrity.

Datasheet Summary
Powered by GS/AI

The BR24T512FVT-3AME2 is a serial EEPROM memory device with a capacity of 512Kbits, utilizing an I¬=C bus interface. It operates within a voltage range of 1.7V to 5.5V, making it suitable for battery-powered applications. The device supports a maximum clock frequency of 1MHz and features a page write mode with a page size of 128 bytes, allowing efficient data writing. This EEPROM is designed for low power consumption, with a write current of up to 4.5mA and a read current of 2.0mA at maximum voltage. It has a write endurance of over 1 million cycles and offers data retention of more than 40 years. The device includes a write protect (WP) function to prevent accidental writes, particularly at low voltage conditions. The BR24T512FVT-3AME2 is AEC-Q100 Grade 3 qualified, indicating its reliability for automotive applications. It is available in a TSSOP-B8 package, measuring 3.00mm x 6.40mm x 1.20mm. The product also features built-in noise filtering on the SCL and SDA terminals, enhancing signal integrity.

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - 1340275-BR24T512FVT-3AME2 - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory - Memory
1340275-BR24T512FVT-3AME2
Integrated Circuits (ICs) - Memory - Memory 1340275-BR24T512FVT-3AME2
Win Source Part Number: 1340275-BR24T512FVT- 3AME2 Category: Integrated Circuits (ICs) - Memory - Memory Series: Automotive, AEC-Q100 Package: Tape & Reel Standard Package: 3,000 Technology: EEPROM Memory Type: Non-Volatile Memory Size: 512Kbit Voltage - Supply: 1.7V ~ 5.5V Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP-B Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: EEPROM Clock Frequency: 1 MHz Write Cycle Time - Word, Page: 5ms Memory Interface: I2C ECCN: 3A991B1B2 Fake Threat In the Open Market: 64 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8542.32.0051 Mfr: Rohm Semiconductor Base Product Number: BR24T512 Memory Organization: 64K x 8

Win Source Part Number: 1340275-BR24T512FVT-3AME2
Category: Integrated Circuits (ICs) - Memory - Memory
Series: Automotive, AEC-Q100
Package: Tape & Reel
Standard Package: 3,000
Technology: EEPROM
Memory Type: Non-Volatile
Memory Size: 512Kbit
Voltage - Supply: 1.7V ~ 5.5V
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP-B
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: EEPROM
Clock Frequency: 1 MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
ECCN: 3A991B1B2
Fake Threat In the Open Market: 64 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0051
Mfr: Rohm Semiconductor
Base Product Number: BR24T512
Memory Organization: 64K x 8

Buy Now Datasheet
Singapore, Singapore
Memory IC and Storage Component
774-BR24T512FVT-3AME2
Memory IC and Storage Component 774-BR24T512FVT-3AME2
IC EEPROM 512KBIT I2C 8TSSOPB Product overview: BR24T512FVT-3AME2 from ROHM Semiconductor is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BR24T512FVT-3AME 2 can be used for catalog matching and distributor lookup.

IC EEPROM 512KBIT I2C 8TSSOPB Product overview: BR24T512FVT-3AME2 from ROHM Semiconductor is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BR24T512FVT-3AME2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IC EEPROM 512KBIT I2C 8TSSOPB

IC EEPROM 512KBIT I2C 8TSSOPB

Supplier's Site Datasheet
Eeprom, Aec-Q100, 512Kbit, -40To85Deg C Rohs Compliant Rohm - 80AH1647 - Newark, An Avnet Company
Chicago, IL, United States
Eeprom, Aec-Q100, 512Kbit, -40To85Deg C Rohs Compliant Rohm
80AH1647
Eeprom, Aec-Q100, 512Kbit, -40To85Deg C Rohs Compliant Rohm 80AH1647
EEPROM, AEC-Q100, 512KBIT, -40TO85DEG C ROHS COMPLIANT: YES

EEPROM, AEC-Q100, 512KBIT, -40TO85DEG C ROHS COMPLIANT: YES

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - BR24T512FVT-3AME2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
BR24T512FVT-3AME2
Integrated Circuits (ICs) - Memory - Memory BR24T512FVT-3AME2
IC EEPROM 512KBIT I2C 8TSSOPB

IC EEPROM 512KBIT I2C 8TSSOPB

Supplier's Site
Memory - BR24T512FVT-3AME2 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 512Kbit I²C 1 MHz 8-TSSOP-B

EEPROM Memory IC 512Kbit I²C 1 MHz 8-TSSOP-B

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Lingto Electronic Limited Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 1340275-BR24T512FVT-3AME2 774-BR24T512FVT-3AME2 BR24T512FVT-3AME2 80AH1647 BR24T512FVT-3AME2 BR24T512FVT-3AME2
Product Name Integrated Circuits (ICs) - Memory - Memory Memory IC and Storage Component Memory Eeprom, Aec-Q100, 512Kbit, -40To85Deg C Rohs Compliant Rohm Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category EEPROM; Non-Volatile EEPROM; Non-Volatile EEPROM; EEPROM EEPROM EEPROM; Non-Volatile EEPROM; EEPROM
Cycle Time 5.00E6 ns 5.00E6 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Package Type SSOP TSSOP; Tape & Reel (TR) SSOP; TSSOP; 8-TSSOP (0.173\", 4.40mm Width)
Supply Voltage 1.7V ~ 5.5V -3.3V; 1.7V ~ 5.5V Surface Mount 1.7V ~ 5.5V
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