ROHM Semiconductor USA, LLC Memory - EEPROM - BR24G128FVT-3AGE2 BR24G128FVT-3AGE2

Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 807466-BR24G128FVT-3 AGE2 Packaging: Reel Mounting Style: SMD Technology: EEPROM Memory Type: Non-Volatile Memory Size: 128Kb (16K x 8) Supplier Device Package: 8-TSSOP-B Temperature Range - Operating: -40°C ~ 85°C Memory Format: EEPROM Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Manufacturer Package: 8-TSSOP Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Supply Voltage (V): 1.7V ~ 5.5V Part Number Series: BR24G128
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Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 807466-BR24G128FVT-3 AGE2 Packaging: Reel Mounting Style: SMD Technology: EEPROM Memory Type: Non-Volatile Memory Size: 128Kb (16K x 8) Supplier Device Package: 8-TSSOP-B Temperature Range - Operating: -40°C ~ 85°C Memory Format: EEPROM Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Manufacturer Package: 8-TSSOP Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Supply Voltage (V): 1.7V ~ 5.5V Part Number Series: BR24G128
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Datasheet
Datasheet Summary
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The BR24G128FVT-3AGE2 is a serial EEPROM memory device with a capacity of 128 kilobits, organized as 16K x 8 bits. It operates on a wide voltage range of 1.7V to 5.5V, making it suitable for battery-powered applications. The device utilizes an I¬=C bus interface, allowing multiple devices to be connected on the same bus, which can help conserve microcontroller ports. This EEPROM supports a maximum clock frequency of 1 MHz and features a page write mode, which is beneficial for initial value writing during factory shipment. It has a self-timed programming cycle and is designed for low current consumption, with a write cycle endurance of over 1 million cycles and data retention exceeding 40 years. Additionally, it includes a write protection function to prevent accidental writes, particularly at low voltage levels. The BR24G128FVT-3AGE2 is available in a TSSOP-B8 package, measuring 3.00mm x 6.40mm x 1.20mm. It is important to note that this product is not recommended for new designs.

Datasheet Summary
Powered by GS/AI

The BR24G128FVT-3AGE2 is a serial EEPROM memory device with a capacity of 128 kilobits, organized as 16K x 8 bits. It operates on a wide voltage range of 1.7V to 5.5V, making it suitable for battery-powered applications. The device utilizes an I¬=C bus interface, allowing multiple devices to be connected on the same bus, which can help conserve microcontroller ports. This EEPROM supports a maximum clock frequency of 1 MHz and features a page write mode, which is beneficial for initial value writing during factory shipment. It has a self-timed programming cycle and is designed for low current consumption, with a write cycle endurance of over 1 million cycles and data retention exceeding 40 years. Additionally, it includes a write protection function to prevent accidental writes, particularly at low voltage levels. The BR24G128FVT-3AGE2 is available in a TSSOP-B8 package, measuring 3.00mm x 6.40mm x 1.20mm. It is important to note that this product is not recommended for new designs.

Suppliers

Company
Product
Description
Supplier Links
Memory - EEPROM - BR24G128FVT-3AGE2 - 807466-BR24G128FVT-3AGE2 - Win Source Electronics
Laguna Hills, CA, United States
Memory - EEPROM - BR24G128FVT-3AGE2
807466-BR24G128FVT-3AGE2
Memory - EEPROM - BR24G128FVT-3AGE2 807466-BR24G128FVT-3AGE2
Manufacturer: Rohm Semiconductor Win Source Part Number: 807466-BR24G128FVT-3 AGE2 Packaging: Reel Mounting Style: SMD Technology: EEPROM Memory Type: Non-Volatile Memory Size: 128Kb (16K x 8) Supplier Device Package: 8-TSSOP-B Temperature Range - Operating: -40°C ~ 85°C Memory Format: EEPROM Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Manufacturer Package: 8-TSSOP Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Supply Voltage (V): 1.7V ~ 5.5V Part Number Series: BR24G128

Manufacturer: Rohm Semiconductor
Win Source Part Number: 807466-BR24G128FVT-3AGE2
Packaging: Reel
Mounting Style: SMD
Technology: EEPROM
Memory Type: Non-Volatile
Memory Size: 128Kb (16K x 8)
Supplier Device Package: 8-TSSOP-B
Temperature Range - Operating: -40°C ~ 85°C
Memory Format: EEPROM
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Manufacturer Package: 8-TSSOP
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Supply Voltage (V): 1.7V ~ 5.5V
Part Number Series: BR24G128

Buy Now
Memory IC and Storage Component - 774-BR24G128FVT-3AGE2 - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-BR24G128FVT-3AGE2
Memory IC and Storage Component 774-BR24G128FVT-3AGE2
IC EEPROM 128KBIT I2C 8TSSOPB Product overview: BR24G128FVT-3AGE2 from ROHM Semiconductor is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BR24G128FVT-3AGE 2 can be used for catalog matching and distributor lookup.

IC EEPROM 128KBIT I2C 8TSSOPB Product overview: BR24G128FVT-3AGE2 from ROHM Semiconductor is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BR24G128FVT-3AGE2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IC EEPROM 128KBIT I2C 8TSSOPB

IC EEPROM 128KBIT I2C 8TSSOPB

Supplier's Site Datasheet
Memory - BR24G128FVT-3AGE2 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 128Kbit I²C 1 MHz 8-TSSOP-B

EEPROM Memory IC 128Kbit I²C 1 MHz 8-TSSOP-B

Buy Now Datasheet
IC EEPROM 128KBIT I2C 8TSSOPB

IC EEPROM 128KBIT I2C 8TSSOPB

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - BR24G128FVT-3AGE2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
BR24G128FVT-3AGE2
Integrated Circuits (ICs) - Memory - Memory BR24G128FVT-3AGE2
IC EEPROM 128KBIT I2C 8TSSOPB

IC EEPROM 128KBIT I2C 8TSSOPB

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 807466-BR24G128FVT-3AGE2 774-BR24G128FVT-3AGE2 BR24G128FVT-3AGE2 BR24G128FVT-3AGE2 BR24G128FVT-3AGE2 BR24G128FVT-3AGE2
Product Name Memory - EEPROM - BR24G128FVT-3AGE2 Memory IC and Storage Component Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category EEPROM; Non-Volatile EEPROM; Non-Volatile EEPROM; EEPROM EEPROM; EEPROM EEPROM; EEPROM EEPROM; EEPROM
Cycle Time 5.00E6 ns 5.00E6 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Package Type SSOP TSSOP; Tape & Reel (TR) 8-TSSOP (0.173", 4.40mm Width) SSOP; TSSOP; 8-TSSOP (0.173\", 4.40mm Width)
Supply Voltage 1.7V ~ 5.5V 1.7V ~ 5.5V 1.7V ~ 5.5V 1.7V ~ 5.5V 8-TSSOP (0.173, 4.40mm Width)
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