ROHM Semiconductor GmbH 1200 V High Voltage High and Low Side Driver BM60213FV-C

Description
The BM60213FV-C is high and low side drive IC which operates up to 1200 V with bootstrap operation, which can drive N-channel power MOSFET and IGBT. Under-voltage Lockout (UVLO) function is built-in.
Datasheet
Description
The BM60213FV-C is high and low side drive IC which operates up to 1200 V with bootstrap operation, which can drive N-channel power MOSFET and IGBT. Under-voltage Lockout (UVLO) function is built-in.
Datasheet

Suppliers

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Description
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1200 V High Voltage High and Low Side Driver - BM60213FV-C - ROHM Semiconductor GmbH
Willich, Germany
1200 V High Voltage High and Low Side Driver
BM60213FV-C
1200 V High Voltage High and Low Side Driver BM60213FV-C
The BM60213FV-C is high and low side drive IC which operates up to 1200 V with bootstrap operation, which can drive N-channel power MOSFET and IGBT. Under-voltage Lockout (UVLO) function is built-in.

The BM60213FV-C is high and low side drive IC which operates up to 1200 V with bootstrap operation, which can drive N-channel power MOSFET and IGBT. Under-voltage Lockout (UVLO) function is built-in.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Gate Drivers
Product Number BM60213FV-C
Product Name 1200 V High Voltage High and Low Side Driver
Number of Outputs 2
Output Current 3 amps
Supply Voltage 10 to 24 volts
Propagation Delay 75 ns
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