ROHM Semiconductor GmbH 100V VB 3.5A/4.5A Peak Current High Frequency High-Side and Low-Side Driver BD2320EFJ-LA

Description
This is the product guarantees long time support in industrial market. BD2320EFJ-LA is the 100V maximum voltage High-Side and Low-Side gate driver which can drive external Nch-FET using the bootstrap method. The driver includes a 100V bootstrap diode and independent inputs control for High-Side and Low-Side. 3.3V and 5.0V are available for interface voltage. Under Voltage Lockout circuits are built in for High-Side and Low-Side. We recommend BD2320UEFJ-LA for your new development. It uses different production lines for the purpose of improving production efficiency. Electric characteristics noted in Datasheet does not differ between Production Line.
Datasheet
Description
This is the product guarantees long time support in industrial market. BD2320EFJ-LA is the 100V maximum voltage High-Side and Low-Side gate driver which can drive external Nch-FET using the bootstrap method. The driver includes a 100V bootstrap diode and independent inputs control for High-Side and Low-Side. 3.3V and 5.0V are available for interface voltage. Under Voltage Lockout circuits are built in for High-Side and Low-Side. We recommend BD2320UEFJ-LA for your new development. It uses different production lines for the purpose of improving production efficiency. Electric characteristics noted in Datasheet does not differ between Production Line.
Datasheet

Suppliers

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100V VB 3.5A/4.5A Peak Current High Frequency High-Side and Low-Side Driver - BD2320EFJ-LA - ROHM Semiconductor GmbH
Willich, Germany
100V VB 3.5A/4.5A Peak Current High Frequency High-Side and Low-Side Driver
BD2320EFJ-LA
100V VB 3.5A/4.5A Peak Current High Frequency High-Side and Low-Side Driver BD2320EFJ-LA
This is the product guarantees long time support in industrial market. BD2320EFJ-LA is the 100V maximum voltage High-Side and Low-Side gate driver which can drive external Nch-FET using the bootstrap method. The driver includes a 100V bootstrap diode and independent inputs control for High-Side and Low-Side. 3.3V and 5.0V are available for interface voltage. Under Voltage Lockout circuits are built in for High-Side and Low-Side. We recommend BD2320UEFJ-LA for your new development. It uses different production lines for the purpose of improving production efficiency. Electric characteristics noted in Datasheet does not differ between Production Line.

This is the product guarantees long time support in industrial market. BD2320EFJ-LA is the 100V maximum voltage High-Side and Low-Side gate driver which can drive external Nch-FET using the bootstrap method. The driver includes a 100V bootstrap diode and independent inputs control for High-Side and Low-Side. 3.3V and 5.0V are available for interface voltage. Under Voltage Lockout circuits are built in for High-Side and Low-Side.
We recommend BD2320UEFJ-LA for your new development. It uses different production lines for the purpose of improving production efficiency. Electric characteristics noted in Datasheet does not differ between Production Line.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Gate Drivers
Product Number BD2320EFJ-LA
Product Name 100V VB 3.5A/4.5A Peak Current High Frequency High-Side and Low-Side Driver
Number of Outputs 2
Supply Voltage 7.5 to 14.5 volts
Operating Temperature -40 to 125 C (-40 to 257 F)
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