ROHM Semiconductor USA, LLC Schottky Barrier Diode BAT54SHM

BAT54SHM is a Schottky Barrier Diode designed for small current rectification applications. It features a compact SOT-23 package and is constructed using silicon epitaxial planar technology, ensuring high reliability. The diode exhibits low forward voltage drop, with typical values ranging from 240 mV to 500 mV depending on the forward current. It has a maximum repetitive peak reverse voltage of 25V and can handle a forward current of up to 200 mA. The reverse recovery time is specified at 50 ns, and the diode has a low reverse leakage current of up to 2 mA. The operating junction temperature ranges from -55°C to +150°C, making it suitable for a variety of environments. This diode is particularly useful in applications where efficiency and reliability are critical.