The 2SC5730 is an NPN silicon epitaxial planar transistor designed for high-speed switching and small-signal amplification, with a collector current rating of 1 A and a collector-emitter voltage rating of 30 V. It is packaged in a TSMT3 surface-mount format with dimensions of 9.1 mm by 5.9 mm. The device has a maximum power dissipation of 500 mW, a junction temperature range of −55 °C to +150 °C, and a typical saturation voltage of 150 mV at IC = 500 mA and IB = 50 mA. It features a transition frequency of 270 MHz and a fall time of 35 ns at IC = 1.0 A. The transistor meets RoHS standards and is supplied in tape and reel packaging with a basic ordering unit of 3,000 pieces.
TRANS NPN 30V 1A TSMT3 Product overview: 2SC5730TLQ from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 1A. Search-friendly keywords include transistor, BJT, switching, amplification, 30V, 1A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SC5730TLQ can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-2SC5730TLQ |
| Product Name | 30V 1A Bipolar Transistor |
| Package Type | Reel |
