Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - UPA1453H-AZ UPA1453H-AZ

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 902052-UPA1453H-AZ Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 83 pct. Supply and Demand Status: Balance Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS: 8541.29.0095
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 902052-UPA1453H-AZ Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 83 pct. Supply and Demand Status: Balance Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS: 8541.29.0095
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Datasheet
Datasheet Summary
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The PA1453 is a PNP silicon power transistor array with four integrated circuits designed for switching applications such as solenoids, relays, and lamps. It is packaged in a 10-pin SIP with a 0.1 inch terminal pitch and dimensions of 26.8 mm maximum length and 5.2 mm width. Each transistor offers a collector current rating of -5 A DC and -10 A pulsed, with a collector-emitter voltage of -60 V and a total power dissipation of 28 W at Tc = 25 °C. The device has a DC current gain (hFE) of 100 to 400 at IC = -2 A and a collector-emitter saturation voltage of -0.3 V max. It is qualified for industrial use and meets NEC's standard quality grade requirements.

Datasheet Summary
Powered by GS/AI

The PA1453 is a PNP silicon power transistor array with four integrated circuits designed for switching applications such as solenoids, relays, and lamps. It is packaged in a 10-pin SIP with a 0.1 inch terminal pitch and dimensions of 26.8 mm maximum length and 5.2 mm width. Each transistor offers a collector current rating of -5 A DC and -10 A pulsed, with a collector-emitter voltage of -60 V and a total power dissipation of 28 W at Tc = 25 °C. The device has a DC current gain (hFE) of 100 to 400 at IC = -2 A and a collector-emitter saturation voltage of -0.3 V max. It is qualified for industrial use and meets NEC's standard quality grade requirements.

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TRANSISTORS - Transistors (BJT) - Single - UPA1453H-AZ - 902052-UPA1453H-AZ - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - UPA1453H-AZ
902052-UPA1453H-AZ
TRANSISTORS - Transistors (BJT) - Single - UPA1453H-AZ 902052-UPA1453H-AZ
Manufacturer: Renesas Electronics America Win Source Part Number: 902052-UPA1453H-AZ Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 83 pct. Supply and Demand Status: Balance Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS: 8541.29.0095

Manufacturer: Renesas Electronics America
Win Source Part Number: 902052-UPA1453H-AZ
Series: *
Features: Bipolar (BJT) Transistor
Package: Bulk
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 83 pct.
Supply and Demand Status: Balance
Quantity per package: 1
MSL Level: 1 (Unlimited)
REACH Status: Vendor Undefined
HTSUS: 8541.29.0095

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Technical Specifications

  Win Source Electronics
Product Category Bipolar RF Transistors
Product Number 902052-UPA1453H-AZ
Product Name TRANSISTORS - Transistors (BJT) - Single - UPA1453H-AZ
Package Type SOT3
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