Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - PHPT60603NY,115 PHPT60603NY,115

NPN high power bipolar transistor for power management, load switching, and linear voltage regulation, housed in a SOT669 (LFPAK56) surface-mounted package measuring 6.20 mm x 5.00 mm x 1.20 mm. It supports a collector-emitter voltage of 60 V and a continuous collector current of 3 A, with a peak pulse current of 8 A. The device operates with a maximum junction temperature of 175 °C and features low collector-emitter saturation resistance, ranging from 60 to 90 mΩ at 3 A collector current. Thermal resistance from junction to ambient is 50 K/W when mounted on an FR4 PCB with a 6 cm² collector pad. The part is not automotive qualified.