Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - PH2520U,115 PH2520U,115

Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 889015-PH2520U,115 Features: N-Channel 20 V 100A (Tc) Surface Mount LFPAK56, Power-SO8 Package: Bulk Package: SC-100, SOT-669 Mounting: Surface Mount Categories: Discrete Semiconductor Products Case / Package: LFPAK56, Power-SO8 Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Quantity per package: 1
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Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 889015-PH2520U,115 Features: N-Channel 20 V 100A (Tc) Surface Mount LFPAK56, Power-SO8 Package: Bulk Package: SC-100, SOT-669 Mounting: Surface Mount Categories: Discrete Semiconductor Products Case / Package: LFPAK56, Power-SO8 Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Quantity per package: 1
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Datasheet
Datasheet Summary
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The PH2520U is an N-channel TrenchMOS FET designed for DC-to-DC converters, portable equipment, notebook computers, and switched-mode power supplies. It is housed in an LFPAK (SOT669) surface-mount package with dimensions of 5.0 mm x 4.10 mm x 1.20 mm maximum. The device has a drain-source voltage rating of 20 V, a continuous drain current of 100 A at 25°C, and a typical on-state resistance of 2.1 mΩ at 4.5 V gate voltage and 25°C. The thermal resistance from junction to mounting base is 2 K/W. It meets IEC 60134 absolute maximum rating standards and features avalanche ruggedness with a non-repetitive drain-source avalanche energy of 250 mJ.

Datasheet Summary
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The PH2520U is an N-channel TrenchMOS FET designed for DC-to-DC converters, portable equipment, notebook computers, and switched-mode power supplies. It is housed in an LFPAK (SOT669) surface-mount package with dimensions of 5.0 mm x 4.10 mm x 1.20 mm maximum. The device has a drain-source voltage rating of 20 V, a continuous drain current of 100 A at 25°C, and a typical on-state resistance of 2.1 mΩ at 4.5 V gate voltage and 25°C. The thermal resistance from junction to mounting base is 2 K/W. It meets IEC 60134 absolute maximum rating standards and features avalanche ruggedness with a non-repetitive drain-source avalanche energy of 250 mJ.

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - PH2520U,115 - 889015-PH2520U,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PH2520U,115
889015-PH2520U,115
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PH2520U,115 889015-PH2520U,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 889015-PH2520U,115 Features: N-Channel 20 V 100A (Tc) Surface Mount LFPAK56, Power-SO8 Package: Bulk Package: SC-100, SOT-669 Mounting: Surface Mount Categories: Discrete Semiconductor Products Case / Package: LFPAK56, Power-SO8 Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 889015-PH2520U,115
Features: N-Channel 20 V 100A (Tc) Surface Mount LFPAK56, Power-SO8
Package: Bulk
Package: SC-100, SOT-669
Mounting: Surface Mount
Categories: Discrete Semiconductor Products
Case / Package: LFPAK56, Power-SO8
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Quantity per package: 1

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 889015-PH2520U,115
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - PH2520U,115
Polarity N-Channel
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