Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - PDTC114EEF115 PDTC114EEF115

NPN resistor-equipped transistor with built-in bias resistors R1 = 10 kΩ and R2 = 10 kΩ, designed for digital switching applications in automotive and industrial segments. Packaged in SOT416 (SC-75) surface-mount case with dimensions conforming to the SOT416 outline, it has an output current capability of 100 mA and a maximum collector-emitter voltage of 50 V. The device is AEC-Q101 qualified for automotive use and supports reflow soldering as the only recommended method. Total power dissipation is rated at 150 mW when mounted on an FR4 PCB with a standard footprint. The case has three leads with input at pin 1, ground at pin 2, and output at pin 3.