Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVTFS4C06NTWG NVTFS4C06NTWG

NVTFS4C06NTWG is an N-channel MOSFET designed for automotive and other high-reliability applications, offering a 30 V drain-to-source voltage rating and a continuous drain current of 21 A at 25°C ambient temperature. It is packaged in an 8-WDFN (3.3 mm × 3.3 mm) surface-mount case with wettable flanks for improved visual inspection. The device features a typical on-resistance of 4.2 mΩ at 10 V gate drive and 6.1 mΩ at 4.5 V, optimized gate charge, and low capacitance to reduce switching and driver losses. It is AEC-Q101 qualified, PPAP capable, and RoHS compliant. The junction temperature range is -55°C to +175°C, and it supports a maximum pulsed drain current of 367 A. The package is Pb-free and halogen-free, with thermal resistance of 48°C/W from junction to ambient on a 650 mm² FR4 board with 2 oz copper.