Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4935NCT1G NTMFS4935NCT1G

NTMFS4935NCT1G is an N-channel MOSFET for power switching applications, housed in an 8-PowerTDFN (5x6) surface-mount package with exposed drain pad. It has a drain-source breakdown voltage of 30 V, a continuous drain current of 93 A at TC = 25°C, and a maximum pulsed drain current of 275 A. The on-state resistance is 3.2 mΩ at VGS = 10 V and ID = 30 A, and 4.2 mΩ at VGS = 4.5 V and ID = 30 A. The device is RoHS compliant, Pb-free, and halogen-free, with an operating junction temperature range of -55°C to 150°C. It meets AEC-Q200 qualification and has single-pulse avalanche energy capability of 110 mJ. The package dimensions conform to case 488AA, style 1, with source, gate, and drain pins arranged for optimized thermal and electrical performance.