The NTLJS3113PTAG is a P-channel MOSFET in a 6-WDFN exposed pad package measuring 2 mm × 2 mm, designed for battery and load management in portable electronics. It features a drain-to-source voltage rating of -20 V, continuous drain current of -3.5 A at 25°C and -2.5 A at 85°C, and power dissipation of 0.7 W under minimum pad conditions. The device supports gate drive down to 1.5 V and is RoHS compliant. Thermal resistance is 180 °C/W under minimum pad mounting. Maximum junction and storage temperature range is -55°C to 150°C. Additionally, it is Pb-free, halogen-free, and meets RoHS standards. The device is surface mountable with an exposed drain pad for improved thermal conduction.
Manufacturer: ON Semiconductor
Win Source Part Number: 929456-NTLJS3113PTAG
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: P-Channel 20 V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)
Package: Bulk
Package: 6-WDFN Exposed Pad
Mounting: Surface Mount
Part Status: Obsolete
Categories: Discrete Semiconductor Products
Case / Package: 6-WDFN (2x2)
Popularity: High
Fake Threat In the Open Market: 74 pct.
Supply and Demand Status: Balance
Quantity per package: 1
| Win Source Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 929456-NTLJS3113PTAG |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLJS3113PTAG |
| Polarity | P-Channel |
