Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD4401PT1 NTHD4401PT1

The NTHD4401PT1 is a dual P-channel MOSFET in a ChipFET package, designed for battery and load management in portable electronics. It has a drain-to-source voltage rating of −20 V and a continuous drain current of −2.1 A at 25°C, with a maximum power dissipation of 1.1 W. The device features a typical on-resistance of 130 mΩ at −4.5 V and −2.1 A, and operates over a junction temperature range of −55°C to 150°C. The ChipFET package measures 3.05 mm × 1.65 mm and is surface mountable with an 8-pin flat lead configuration. It meets RoHS standards and is available in tape and reel packaging. The part is qualified to AEC-Q200 and UL 94 V-0 standards.