Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4965N-1G NTD4965N-1G

NTD4965N-1G is an N-channel MOSFET in the IPAK package with straight leads, designed for use in DC-DC converters and CPU power delivery. It has a drain-source voltage rating of 30 V, a continuous drain current of 13.0 A at 25°C ambient temperature, and 68 A at 25°C case temperature. The device features a maximum on-resistance of 10 mΩ at 4.5 V gate drive and 4.7 mΩ at 10 V gate drive, with a total gate charge of 28.2 nC at 10 V gate drive. The package dimensions conform to Case 369AC, with a maximum height of 6.35 mm and a lead pitch of 2.29 mm. It is Pb-free, RoHS compliant, and rated for operation from -55°C to +175°C junction temperature.