Rochester Electronics Specialized ICs MRF8P20100HSR3,128

The MRF8P20100HSR3 is an N-Channel enhancement-mode lateral MOSFET designed for RF power applications, specifically targeting CDMA and GSM EDGE base station operations. It operates effectively within a frequency range of 1805 to 2025 MHz and is suitable for Class AB and Class C modulation formats. The device is characterized by a typical output power of 20 Watts average at a drain-source voltage of 28 Volts, with a drain efficiency of approximately 44.3% at 2025 MHz. The transistor features integrated ESD protection and is internally matched for ease of use. It is tested in a symmetrical Doherty configuration and is RoHS compliant. The device can handle a maximum junction temperature of 225°C and has a thermal resistance of 0.59°C/W from junction to case. The MRF8P20100HSR3 is packaged in a tape and reel format, with 250 units per reel, making it convenient for automated assembly processes. This product is suitable for engineers looking for reliable RF power transistors for cellular base station applications.