The MMUN2130LT1G is a PNP digital transistor with a monolithic bias resistor network, designed to replace a transistor and external bias resistors, reducing board space and component count. It is packaged in SOT-23-3 (TO-236) and rated for a maximum collector-emitter voltage of 50 V and continuous collector current of 100 mA. Total device dissipation is 246 mW at 25°C, with a derating of 2.0 mW/°C above 25°C. The device is RoHS compliant, Pb-free, halogen-free, and AEC-Q101 qualified for automotive applications. Junction and storage temperature range is from -55°C to +150°C.
Manufacturer: ON Semiconductor
Win Source Part Number: 885483-MMUN2130LT1G
Features: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)
Package: Bulk
Package: TO-236-3, SC-59, SOT-23-3
Mounting: Surface Mount
Categories: Discrete Semiconductor Products
Case / Package: SOT-23-3 (TO-236)
Popularity: Medium
Fake Threat In the Open Market: 92 pct.
Supply and Demand Status: Limited
Quantity per package: 1
| Win Source Electronics | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 885483-MMUN2130LT1G |
| Product Name | TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2130LT1G |
| Polarity | PNP |
