Rochester Electronics TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2113LT1 MMUN2113LT1

The MMUN2113LT1 is a PNP silicon surface mount transistor with integrated monolithic bias resistors, replacing discrete components to reduce board space. Housed in an SOT-23-3 package (2.90 mm × 1.30 mm), it features a 50 V collector-base and collector-emitter voltage rating and a 100 mA maximum collector current. Total power dissipation is 246 mW at 25°C, with a thermal resistance of 508 °C/W. The bias network consists of two 47 kΩ resistors. DC current gain ranges from 80 to 140 at IC = 5.0 mA and VCE = 10 V. Collector-emitter saturation voltage is 0.25 V under rated conditions. The device is available in 3000-piece tape and reel packaging, is Pb-free, and meets AEC-Q200 and RoHS standards.