Rochester Electronics TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2112LT1 MMUN2112LT1

The MMUN2112LT1 is a PNP silicon surface mount transistor with a monolithic bias resistor network, designed to replace a discrete transistor and its external bias resistors. It is housed in an SOT-23 package measuring 2.90 mm × 1.30 mm × 1.11 mm, with a total device power dissipation of 246 mW at 25°C and a maximum collector current of 100 mA. The device features a collector-emitter voltage rating of 50 V, a collector-base voltage rating of 50 V, and a DC current gain (hFE) range of 60 to 100 at VCE = 10 V and IC = 5.0 mA. The bias network consists of a 22 kΩ series base resistor and a 22 kΩ base-emitter resistor. It is available in 3000-reel packaging and meets RoHS standards. Thermal resistance from junction to ambient is 508 °C/W for minimum pad FR-4 mounting.