Rochester Electronics TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2111LT1 MMUN2111LT1

Description
Manufacturer: ON Semiconductor Win Source Part Number: 885480-MMUN2111LT1 Features: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236) Package: Bulk Package: TO-236-3, SC-59, SOT-23-3 Mounting: Surface Mount Part Status: Obsolete Categories: Discrete Semiconductor Products Case / Package: SOT-23-3 (TO-236) ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Quantity per package: 3000 HTSUS: 8541.21.0095
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 885480-MMUN2111LT1 Features: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236) Package: Bulk Package: TO-236-3, SC-59, SOT-23-3 Mounting: Surface Mount Part Status: Obsolete Categories: Discrete Semiconductor Products Case / Package: SOT-23-3 (TO-236) ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Quantity per package: 3000 HTSUS: 8541.21.0095
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Datasheet
Datasheet Summary
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The MMUN2111LT1 is a PNP silicon surface mount transistor with an integrated monolithic bias resistor network, designed to replace a transistor and its external bias resistors. It is housed in an SOT-23 package, measuring 2.90 mm in length, 1.30 mm in width, and 1.00 mm in height. The device has a collector-emitter voltage rating of 50 V, a maximum collector current of 100 mA, and a total device dissipation of 246 mW at 25°C. The base resistor R1 is 10 kΩ and the base-emitter resistor R2 is 10 kΩ. It operates with a junction temperature range from -55°C to +150°C and is available in 3000-piece tape and reel packaging.

Datasheet Summary
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The MMUN2111LT1 is a PNP silicon surface mount transistor with an integrated monolithic bias resistor network, designed to replace a transistor and its external bias resistors. It is housed in an SOT-23 package, measuring 2.90 mm in length, 1.30 mm in width, and 1.00 mm in height. The device has a collector-emitter voltage rating of 50 V, a maximum collector current of 100 mA, and a total device dissipation of 246 mW at 25°C. The base resistor R1 is 10 kΩ and the base-emitter resistor R2 is 10 kΩ. It operates with a junction temperature range from -55°C to +150°C and is available in 3000-piece tape and reel packaging.

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TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2111LT1 - 885480-MMUN2111LT1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2111LT1
885480-MMUN2111LT1
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2111LT1 885480-MMUN2111LT1
Manufacturer: ON Semiconductor Win Source Part Number: 885480-MMUN2111LT1 Features: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236) Package: Bulk Package: TO-236-3, SC-59, SOT-23-3 Mounting: Surface Mount Part Status: Obsolete Categories: Discrete Semiconductor Products Case / Package: SOT-23-3 (TO-236) ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Quantity per package: 3000 HTSUS: 8541.21.0095

Manufacturer: ON Semiconductor
Win Source Part Number: 885480-MMUN2111LT1
Features: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)
Package: Bulk
Package: TO-236-3, SC-59, SOT-23-3
Mounting: Surface Mount
Part Status: Obsolete
Categories: Discrete Semiconductor Products
Case / Package: SOT-23-3 (TO-236)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
HTSUS: 8541.21.0095

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Technical Specifications

  Win Source Electronics
Product Category Bipolar RF Transistors
Product Number 885480-MMUN2111LT1
Product Name TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MMUN2111LT1
Polarity PNP
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