Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMBFJ310LT1 MMBFJ310LT1

Description
Manufacturer: ON Semiconductor Win Source Part Number: 885308-MMBFJ310LT1 Features: RF Mosfet N-Channel JFET 10 V 10 mA - - - SOT-23-3 (TO-236) Package: Bulk Package: TO-236-3, SC-59, SOT-23-3 Part Status: Obsolete Categories: Discrete Semiconductor Products Case / Package: SOT-23-3 (TO-236) ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited Quantity per package: 3000 HTSUS: 8541.21.0095 Other Part Number: 2156-MMBFJ310LT1, 2156-MMBFJ310LT1-ONT R-ND
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 885308-MMBFJ310LT1 Features: RF Mosfet N-Channel JFET 10 V 10 mA - - - SOT-23-3 (TO-236) Package: Bulk Package: TO-236-3, SC-59, SOT-23-3 Part Status: Obsolete Categories: Discrete Semiconductor Products Case / Package: SOT-23-3 (TO-236) ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited Quantity per package: 3000 HTSUS: 8541.21.0095 Other Part Number: 2156-MMBFJ310LT1, 2156-MMBFJ310LT1-ONT R-ND
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Datasheet
Datasheet Summary
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The MMBFJ310LT1 is an N-channel JFET transistor designed for VHF/UHF amplifier applications, housed in a SOT-23 (TO-236) package measuring 2.90 mm by 1.30 mm with a height of 1.11 mm. It has a drain-source voltage rating of 25 Vdc and a gate-source breakdown voltage of -25 Vdc. The device has a gate-source cutoff voltage range of -2.0 V to -6.5 V and a zero-gate-voltage drain current between 24 mA and 60 mA at VDS = 10 V. Total device dissipation is 225 mW at 25°C with a derating of 1.8 mW/°C above this temperature. The part is Pb-free, meets RoHS standards, and operates with a junction and storage temperature range of -55°C to +150°C.

Datasheet Summary
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The MMBFJ310LT1 is an N-channel JFET transistor designed for VHF/UHF amplifier applications, housed in a SOT-23 (TO-236) package measuring 2.90 mm by 1.30 mm with a height of 1.11 mm. It has a drain-source voltage rating of 25 Vdc and a gate-source breakdown voltage of -25 Vdc. The device has a gate-source cutoff voltage range of -2.0 V to -6.5 V and a zero-gate-voltage drain current between 24 mA and 60 mA at VDS = 10 V. Total device dissipation is 225 mW at 25°C with a derating of 1.8 mW/°C above this temperature. The part is Pb-free, meets RoHS standards, and operates with a junction and storage temperature range of -55°C to +150°C.

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMBFJ310LT1 - 885308-MMBFJ310LT1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMBFJ310LT1
885308-MMBFJ310LT1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMBFJ310LT1 885308-MMBFJ310LT1
Manufacturer: ON Semiconductor Win Source Part Number: 885308-MMBFJ310LT1 Features: RF Mosfet N-Channel JFET 10 V 10 mA - - - SOT-23-3 (TO-236) Package: Bulk Package: TO-236-3, SC-59, SOT-23-3 Part Status: Obsolete Categories: Discrete Semiconductor Products Case / Package: SOT-23-3 (TO-236) ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited Quantity per package: 3000 HTSUS: 8541.21.0095 Other Part Number: 2156-MMBFJ310LT1, 2156-MMBFJ310LT1-ONT R-ND

Manufacturer: ON Semiconductor
Win Source Part Number: 885308-MMBFJ310LT1
Features: RF Mosfet N-Channel JFET 10 V 10 mA - - - SOT-23-3 (TO-236)
Package: Bulk
Package: TO-236-3, SC-59, SOT-23-3
Part Status: Obsolete
Categories: Discrete Semiconductor Products
Case / Package: SOT-23-3 (TO-236)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
HTSUS: 8541.21.0095
Other Part Number: 2156-MMBFJ310LT1, 2156-MMBFJ310LT1-ONTR-ND

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 885308-MMBFJ310LT1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - MMBFJ310LT1
Polarity N-Channel
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