Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - MJF18002 MJF18002

The MJF18002 is an NPN bipolar power transistor designed for switching power supply applications and electronic ballasts, featuring a maximum collector-emitter voltage of 1000 Vdc and a continuous collector current of 2.0 Adc. It is packaged in an isolated TO-220 case (Case 221D) with a thermal resistance from junction to case of 5.0 °C/W and a maximum power dissipation of 25 W at 25°C. The device is UL recognized at 3500 VRMS (File E69369), has a DC current gain (hFE) ranging from 14 to 34, and exhibits a collector-emitter saturation voltage of 0.2 to 0.5 V at 1.0 Adc. Its switching characteristics include a turn-off time of 1.2 to 2.5 ms under resistive load and a current gain bandwidth (fT) of 13 MHz. The operating and storage temperature range is -65°C to 150°C.