Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - MJE18204 MJE18204

Description
Manufacturer: ON Semiconductor Win Source Part Number: 884906-MJE18204 Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 884906-MJE18204 Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095
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Datasheet
Datasheet Summary
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The MJE18204 is an NPN bipolar power transistor for electronic ballast and switching power supplies, housed in a TO-220AB package measuring 15.75 mm in length. It handles up to 600 V collector-emitter voltage and 5 A continuous collector current. With a maximum power dissipation of 75 W at 25 °C, its junction-to-case thermal resistance is 1.65 °C/W. Base-emitter saturation voltage is 1.25 V at 2 A collector and 0.4 A base current. Minimum DC current gain is 10 at 1 A collector current and 1 V collector-emitter voltage. The device operates from -65 °C to 150 °C and has an isolation rating of 4500 Vrms for one second. Lead temperature for soldering is rated to 260 °C for 5 seconds.

Datasheet Summary
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The MJE18204 is an NPN bipolar power transistor for electronic ballast and switching power supplies, housed in a TO-220AB package measuring 15.75 mm in length. It handles up to 600 V collector-emitter voltage and 5 A continuous collector current. With a maximum power dissipation of 75 W at 25 °C, its junction-to-case thermal resistance is 1.65 °C/W. Base-emitter saturation voltage is 1.25 V at 2 A collector and 0.4 A base current. Minimum DC current gain is 10 at 1 A collector current and 1 V collector-emitter voltage. The device operates from -65 °C to 150 °C and has an isolation rating of 4500 Vrms for one second. Lead temperature for soldering is rated to 260 °C for 5 seconds.

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TRANSISTORS - Transistors (BJT) - Single - MJE18204 - 884906-MJE18204 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJE18204
884906-MJE18204
TRANSISTORS - Transistors (BJT) - Single - MJE18204 884906-MJE18204
Manufacturer: ON Semiconductor Win Source Part Number: 884906-MJE18204 Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095

Manufacturer: ON Semiconductor
Win Source Part Number: 884906-MJE18204
Series: *
Features: Bipolar (BJT) Transistor
Package: Bulk
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Quantity per package: 1
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095

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Technical Specifications

  Win Source Electronics
Product Category Bipolar RF Transistors
Product Number 884906-MJE18204
Product Name TRANSISTORS - Transistors (BJT) - Single - MJE18204
Package Type SOT3
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