Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - MC3346DR2 MC3346DR2

Description
Manufacturer: ON Semiconductor Win Source Part Number: 883386-MC3346DR2 Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 75 pct. Supply and Demand Status: Limited Quantity per package: 2500 MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 883386-MC3346DR2 Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 75 pct. Supply and Demand Status: Limited Quantity per package: 2500 MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095
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Datasheet
Datasheet Summary
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The MC3346 is a general-purpose transistor array containing five isolated transistors, including one differentially connected pair, designed for low-power consumer and industrial applications. It is available in two package styles: a 14-pin plastic DIP (CASE 646) measuring 18.16 to 18.80 mm in length and a 14-pin SO-14 (CASE 751A) measuring 8.55 to 8.75 mm in length. The device operates over a temperature range of -40°C to +85°C, with a maximum collector-emitter voltage of 15 Vdc, collector current of 50 mAdc, and total power dissipation of 1.2 W at 25°C. Guaranteed base-emitter voltage matching and low input offset characteristics support precise analog applications. It meets RoHS standards and is qualified for automotive use under AEC-Q200.

Datasheet Summary
Powered by GS/AI

The MC3346 is a general-purpose transistor array containing five isolated transistors, including one differentially connected pair, designed for low-power consumer and industrial applications. It is available in two package styles: a 14-pin plastic DIP (CASE 646) measuring 18.16 to 18.80 mm in length and a 14-pin SO-14 (CASE 751A) measuring 8.55 to 8.75 mm in length. The device operates over a temperature range of -40°C to +85°C, with a maximum collector-emitter voltage of 15 Vdc, collector current of 50 mAdc, and total power dissipation of 1.2 W at 25°C. Guaranteed base-emitter voltage matching and low input offset characteristics support precise analog applications. It meets RoHS standards and is qualified for automotive use under AEC-Q200.

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TRANSISTORS - Transistors (BJT) - Single - MC3346DR2 - 883386-MC3346DR2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MC3346DR2
883386-MC3346DR2
TRANSISTORS - Transistors (BJT) - Single - MC3346DR2 883386-MC3346DR2
Manufacturer: ON Semiconductor Win Source Part Number: 883386-MC3346DR2 Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 75 pct. Supply and Demand Status: Limited Quantity per package: 2500 MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095

Manufacturer: ON Semiconductor
Win Source Part Number: 883386-MC3346DR2
Series: *
Features: Bipolar (BJT) Transistor
Package: Bulk
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 75 pct.
Supply and Demand Status: Limited
Quantity per package: 2500
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095

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Technical Specifications

  Win Source Electronics
Product Category Bipolar RF Transistors
Product Number 883386-MC3346DR2
Product Name TRANSISTORS - Transistors (BJT) - Single - MC3346DR2
Package Type SOT3
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