Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFSL3107PBF IRFSL3107PBF

The IRFSL3107PbF is an N-channel HEXFET power MOSFET designed for high-efficiency synchronous rectification and high-speed switching applications. It is packaged in a TO-262-3 long lead format (I2Pak, TO-262AA) with a through-hole mounting style. The device has a drain-to-source voltage rating of 75 V, a continuous drain current of 195 A (package-limited) at 25°C, and a maximum power dissipation of 370 W. The typical on-resistance is 2.5 mΩ at 10 V gate drive and 140 A drain current. It supports a junction temperature range of -55°C to 175°C, has agate-to-source voltage limit of ±20 V, and includes enhanced body diode dV/dt and dI/dt capability. The part is characterized for repetitive avalanche energy and meets industrial qualification standards.